Rao P N, Goutam U K, Kumar Prabhat, Gupta Mukul, Ganguli Tapas, Rai S K
Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India.
Technical Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400094, India.
J Synchrotron Radiat. 2019 May 1;26(Pt 3):793-800. doi: 10.1107/S1600577519002339. Epub 2019 Apr 5.
W/BC multilayers (MLs) consisting of ten layer pairs with varying boron carbide layer thicknesses have been investigated. The ML structures were characterized using grazing-incidence hard X-ray reflectivity (GIXR), resonant soft X-ray reflectivity (RSXR), hard X-ray photoelectron spectroscopy (HAXPES) and X-ray absorption near-edge spectroscopy (XANES). Depth-resolved spectroscopic information on the boron carbide layer in W/BC MLs was extracted with sub-nanometre resolution using reflectivity performed in the vicinity of the B K-edge. Interestingly, these results show that the composition of boron carbide films is strongly dependent on layer thicknesses. HAXPES measurements suggest that most of the boron is in the chemical state of BC in the multilayer structures. XANES measurements suggest an increase in boron content and C-B-C bonding with increase in boron carbide layer thickness.
对由十层硼化碳层厚度不同的层对组成的W/BC多层膜(MLs)进行了研究。使用掠入射硬X射线反射率(GIXR)、共振软X射线反射率(RSXR)、硬X射线光电子能谱(HAXPES)和X射线吸收近边光谱(XANES)对多层膜结构进行了表征。利用在B K边附近进行的反射率,以亚纳米分辨率提取了W/BC多层膜中硼化碳层的深度分辨光谱信息。有趣的是,这些结果表明硼化碳薄膜的成分强烈依赖于层厚度。HAXPES测量表明,在多层结构中,大部分硼处于BC的化学状态。XANES测量表明,随着硼化碳层厚度的增加,硼含量和C-B-C键合增加。