Choi Solip, Jeong Jae Won, Jo Gyounglyul, Ma Byung Chol, Chang Mincheol
Department of Polymer Engineering, Graduate School, Chonnam National University, Gwangju 61186, South Korea.
School of Chemical Engineering, Chonnam National University, Gwangju 61186, South Korea.
Nanoscale. 2019 May 28;11(20):10004-10016. doi: 10.1039/c9nr02425e. Epub 2019 May 13.
Improving the environmental stability of conjugated polymers remains a fundamental challenge that limits their widespread adoption and commercial application in electronic and photonic devices. Although paraffin can have excellent barrier properties against moisture in ambient air, the use of conjugated polymer/paraffin blends to fabricate organic field-effect transistors (OFETs) with high environmental stability has not been attempted. Here, we demonstrate that conjugated polymer/paraffin blends can greatly enhance the environmental stability of OFETs. Compared to conventional systems such as poly(3-hexylthiophene) (P3HT)/polystyrene and P3HT/polydimethylsiloxane blends, P3HT/paraffin blends exhibit superior environmental stability after 30 days of exposure to the ambient atmosphere. Furthermore, the conjugated polymer/paraffin blends provide stable electronic properties under severe mechanical deformation [a strain (ε) of ∼150%], overcoming a critical challenge arising from the use of fragile crystalline conjugated polymer films for flexible and stretchable electronic devices. In comparison with a conventional spin-coating method, a shear-coating technique provides enhanced molecular ordering and alignment, resulting in improved charge carrier mobility in the blend film OFETs. In particular, shearing in the evaporation regime improves the molecular ordering and alignment of the blend films more than shearing in the Landau-Levich regime. Interestingly, the environmental stability of the sheared blend films varies depending on the shear speed. Specifically, OFETs based on blend films sheared at 0.5 and 6.0-10.0 mm s exhibit excellent environmental stability, maintaining 80% of their initial mobility after 30 days of exposure to air. In contrast, the environmental stability of the OFETs decreases considerably when the blend films are sheared at 1.0-4.0 mm s; the mobility decreases to as low as ∼20% of the initial value.
提高共轭聚合物的环境稳定性仍然是一项根本性挑战,这限制了它们在电子和光子器件中的广泛应用及商业应用。尽管石蜡对环境空气中的水分具有优异的阻隔性能,但尚未有人尝试使用共轭聚合物/石蜡共混物来制造具有高环境稳定性的有机场效应晶体管(OFET)。在此,我们证明共轭聚合物/石蜡共混物能够极大地提高OFET的环境稳定性。与诸如聚(3-己基噻吩)(P3HT)/聚苯乙烯和P3HT/聚二甲基硅氧烷共混物等传统体系相比,P3HT/石蜡共混物在暴露于环境大气30天后表现出卓越的环境稳定性。此外,共轭聚合物/石蜡共混物在严重机械变形(应变(ε)约为150%)下能提供稳定的电子性能,克服了在柔性和可拉伸电子器件中使用易碎的结晶共轭聚合物薄膜所带来的关键挑战。与传统的旋涂方法相比,剪切涂布技术能增强分子的有序排列,从而提高共混膜OFET中的载流子迁移率。特别是,蒸发阶段的剪切比朗道-列维奇阶段的剪切更能改善共混膜的分子有序排列和取向。有趣的是,剪切共混膜的环境稳定性随剪切速度而变化。具体而言,基于在0.5和6.0 - 10.0 mm/s下剪切的共混膜的OFET表现出优异的环境稳定性,在暴露于空气30天后仍保持其初始迁移率的80%。相比之下,当共混膜在1.0 - 4.0 mm/s下剪切时,OFET的环境稳定性显著下降;迁移率降至初始值的约20%。