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通过大阳离子整合增强α-[HC(NH)]PbI杂化钙钛矿的稳定性和带隙调谐

Enhanced Stability and Band Gap Tuning of α-[HC(NH)]PbI Hybrid Perovskite by Large Cation Integration.

作者信息

Leblanc Antonin, Mercier Nicolas, Allain Magali, Dittmer Jens, Pauporté Thierry, Fernandez Vincent, Boucher Florent, Kepenekian Mikael, Katan Claudine

机构信息

MOLTECH-ANJOU, UMR-CNRS 6200 , Université d'Angers , 2 Bd Lavoisier , 49045 Angers , France.

Institut des Molécules et Matériaux du Mans, CNRS UMR 6283 , Le Mans Université , Avenue Olivier Messiaen , 72085 Le Mans cedex 9, France.

出版信息

ACS Appl Mater Interfaces. 2019 Jun 12;11(23):20743-20751. doi: 10.1021/acsami.9b00210. Epub 2019 May 30.

Abstract

We report room-temperature synthesis of lead- and iodide-deficient α-[HC(NH)]PbI perovskites (abbreviated d-α-FAPI, FA = formamidinium), with the general formula (A',FA)[PbI] (with A' = hydroxyethylammonium (HEA) or thioethylammonium (TEA) cations, 0.04 ≤ x ≤ 0.15). These materials retain a 3D character of their perovskite network despite incorporation of large HEA or TEA cations, demonstrating that the Goldschmidt tolerance factor can be bypassed. We found that thin films of (TEA,FA)[PbI] ( x = 0.04 and 0.13) show exceptional α-phase stability under ambient conditions, 1 order of magnitude higher than α-FAPI and α-(Cs,FA)PbI thin films. d-α-FAPI phases are shown to maintain a direct band gap, which increases monotonously for x ranging from 0 up to 0.20, with characteristics of a p-type semiconductor for low concentrations of vacancies ( x ≤ 0.13) and n-type for larger ones. They offer alternatives to reach the methylammonium- and bromine-free stable α-FAPI-type phase and open new avenues in the field of perovskite solar cells, up to band gap tuning desirable for tandem solar cells.

摘要

我们报道了室温下合成铅和碘缺乏的α-[HC(NH)]PbI钙钛矿(缩写为d-α-FAPI,FA = 甲脒),其通式为(A',FA)[PbI](其中A' = 羟乙基铵(HEA)或硫代乙基铵(TEA)阳离子,0.04 ≤ x ≤ 0.15)。尽管掺入了大的HEA或TEA阳离子,但这些材料仍保留其钙钛矿网络的三维特征,这表明可以绕过戈尔德施密特容忍因子。我们发现(TEA,FA)[PbI](x = 0.04和0.13)薄膜在环境条件下表现出异常的α相稳定性,比α-FAPI和α-(Cs,FA)PbI薄膜高1个数量级。d-α-FAPI相显示出保持直接带隙,对于x从0到0.20的范围,带隙单调增加,对于低浓度空位(x ≤ 0.13)具有p型半导体特征,对于较大空位则为n型。它们为实现无甲铵和无溴的稳定α-FAPI型相提供了替代方案,并在钙钛矿太阳能电池领域开辟了新途径,直至实现串联太阳能电池所需的带隙调谐。

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