Dou Yuchen, Luo Hong, Zhang Jing, Tang Xiaohua
College of Materials Science and Engineering, Sichuan University of Science and Engineering, Zigong 643000, China.
College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China.
Materials (Basel). 2019 May 11;12(9):1548. doi: 10.3390/ma12091548.
In this work, the generalized stacking fault energies (GSFEs) of {10-11}<11-23> slip system in a wide range of Mg-X (X = Ag, Al, Bi, Ca, Dy, Er, Gd, Ho, Li, Lu, Mn, Nd, Pb, Sc, Sm, Sn, Y, Yb, Zn and Zr) binary alloys has been studied. The doping concentration in the doping plane and the Mg-X system is 12.5 at.% and 1.79 at.%, respectively. Two slip modes (slip mode I and II) were considered. For pure magnesium, these two slip modes are equivalent to each other. However, substituting a solute atom into the magnesium matrix will cause different effects on these two slip modes. Based on the calculated GSFEs, two design maps were constructed to predict solute effects on the behavior of the {10-11}<11-23> dislocations. The design maps suggest that the addition of Ag, Al, Ca, Dy, Er, Gd, Ho, Lu, Nd, Sm, Y, Yb and Zn could facilitate the {10-11}<11-23> dislocations.
在本研究中，对一系列Mg-X（X = Ag、Al、Bi、Ca、Dy、Er、Gd、Ho、Li、Lu、Mn、Nd、Pb、Sc、Sm、Sn、Y、Yb、Zn和Zr）二元合金中{10-11}<11-23>滑移系的广义堆垛层错能（GSFEs）进行了研究。掺杂平面和Mg-X体系中的掺杂浓度分别为12.5 at.%和1.79 at.%。考虑了两种滑移模式（滑移模式I和II）。对于纯镁，这两种滑移模式彼此等效。然而，将溶质原子代入镁基体将对这两种滑移模式产生不同影响。基于计算得到的GSFEs，构建了两个设计图以预测溶质对{10-11}<11-23>位错行为的影响。设计图表明，添加Ag、Al、Ca、Dy、Er、Gd、Ho、Lu、Nd、Sm、Y、Yb和Zn可促进{10-11}<11-23>位错。
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