Kang Dong Hee, Kim Na Kyong, Kang Hyun Wook
Department of Mechanical Engineering, Chonnam National University, 77 Youngbong-ro, Buk-Gu, Gwangju 61186, Republic of Korea.
Nanotechnology. 2019 Sep 6;30(36):365303. doi: 10.1088/1361-6528/ab2278. Epub 2019 May 17.
Zinc oxide(ZnO) is a versatile semiconductor material and its use is expanding into photoelectric applications. Anisotropic growth characteristics of ZnO are advantageous for growing a nanowire structure. ZnO nanowire based sensors exhibit enhanced performance in terms of photodetection due to their large specific surface area. ZnO nanowires on a highly aligned electrospun poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) nanofiber-based film are fabricated high performance ultraviolet (UV) detector. The movement of photo-induced electrons from ZnO nanowires is more effective in aligned electrospun film substrate (R/R = 551.0) than random electrospun film substrate (R/R = 47.8) under continuous UV irradiation. The current difference is 3.98 times higher on ZnO nanowires on aligned electrospun film than it is on random electrospun film in UV light on-off cycles. As a result, we improve the performance of photo sensitivity of electrospun nanofiber-based ZnO nanowires through controlling the directionality and fabrication time of the electrospun film without additional processes.
氧化锌（ZnO）是一种多功能半导体材料，其应用正在扩展到光电领域。ZnO的各向异性生长特性有利于纳米线结构的生长。基于ZnO纳米线的传感器由于其大的比表面积，在光电探测方面表现出增强的性能。在高度取向的电纺聚偏二氟乙烯-三氟乙烯共聚物（PVDF-TrFE）纳米纤维基薄膜上制备的ZnO纳米线是高性能的紫外探测器。在连续紫外照射下，光致电子从ZnO纳米线的移动在取向电纺薄膜基底（R/R = 551.0）中比在随机电纺薄膜基底（R/R = 47.8）中更有效。在紫外光开关循环中，取向电纺薄膜上的ZnO纳米线的电流差比随机电纺薄膜上的高3.98倍。因此，我们通过控制电纺薄膜的方向性和制备时间，无需额外工艺，提高了基于电纺纳米纤维的ZnO纳米线的光敏性能。
