Chen Xu, Wu Mingfei, Liu Xingxing, Wang Ding, Liu Feng, Chen Yuwei, Yi Fei, Huang Wanxia, Wang Shaowei
School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Nanomaterials (Basel). 2019 Jun 1;9(6):834. doi: 10.3390/nano9060834.
A new simple way for tuning the phase transition temperature (PTT) of VO thin films has been proposed to solve the problem of changing the doping ratio by using the dual-target co-sputtering method. A series of samples with W doping ratios of 0%, 0.5%, 1%, 1.5% and 2% have been fabricated by sputtering V films with the power of pure and 2% W-doped V targets from 500 W: 0 W, 500 W: 250 W, 500 W: 500 W, 250 W: 500 W to 0 W: 500 W respectively and then annealed in an oxygen atmosphere to form VO. The XRD results of both pure and W-doped VO samples reveal that VO forms and is the main component after annealing. The PTT can be tuned by controlling the sputtering power ratio of the pure and doped targets. It can be tuned easily from 64.3 °C to 36.5 °C by using the pure and 2% W-doped targets for demonstration, with W doping ratios from 0% to 2%. It is also valid for other doping elements and is a promising approach for the large-scale production of sputtering.
为了解决通过双靶共溅射法改变掺杂比的问题，提出了一种调节VO薄膜相变温度（PTT）的新的简单方法。通过分别用功率为500W:0W、500W:250W、500W:500W、250W:500W至0W:500W的纯V靶和2%W掺杂V靶溅射V薄膜，制备了一系列W掺杂比为0%、0.5%、1%、1.5%和2%的样品，然后在氧气气氛中退火以形成VO。纯VO和W掺杂VO样品的XRD结果表明，退火后VO形成且是主要成分。通过控制纯靶和掺杂靶的溅射功率比可以调节PTT。以纯靶和2%W掺杂靶为例，W掺杂比从0%到2%时，PTT可轻松从64.3℃调节到36.5℃。这对其他掺杂元素也有效，是一种用于溅射大规模生产的有前景的方法。
