Zeng Yijie, Wang Luyang, Li Song, He Chunshan, Zhong Dingyong, Yao Dao-Xin
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, People's Republic of China.
J Phys Condens Matter. 2019 Oct 2;31(39):395502. doi: 10.1088/1361-648X/ab28d1. Epub 2019 Jun 11.
We study the magnetic proximity effect on a two-dimensional topological insulator in a CrI/SnI/CrI trilayer structure. From first-principles calculations, the BiI-type SnI monolayer without spin-orbit coupling has Dirac cones at the corners of the hexagonal Brillouin zone. With spin-orbit coupling turned on, it becomes a topological insulator, as revealed by a non-vanishing Z invariant and an effective model from symmetry considerations. Without spin-orbit coupling, the Dirac points are protected if the CrI layers are stacked ferromagnetically, and are gapped if the CrI layers are stacked antiferromagnetically, which can be explained by the irreducible representations of the magnetic space groups [Formula: see text] and [Formula: see text], corresponding to ferromagnetic and antiferromagnetic stacking, respectively. By analyzing the effective model including the perturbations, we find that the competition between the magnetic proximity effect and spin-orbit coupling leads to a topological phase transition between a trivial insulator and a topological insulator.
我们研究了CrI/SnI/CrI三层结构中二维拓扑绝缘体上的磁近邻效应。通过第一性原理计算,没有自旋轨道耦合的BiI型SnI单层在六边形布里渊区的角上具有狄拉克锥。开启自旋轨道耦合后,如非零Z不变量和基于对称性考虑的有效模型所揭示的,它变成了拓扑绝缘体。没有自旋轨道耦合时,如果CrI层铁磁堆叠,狄拉克点受到保护;如果CrI层反铁磁堆叠,则出现能隙,这可以通过分别对应铁磁和反铁磁堆叠的磁空间群[公式:见正文]和[公式:见正文]的不可约表示来解释。通过分析包含微扰的有效模型,我们发现磁近邻效应和自旋轨道耦合之间的竞争导致了平凡绝缘体和拓扑绝缘体之间的拓扑相变。