在生长于CrGeTe衬底上的（BiSb）Te薄膜中记录到高接近诱导反常霍尔效应。
Record High-Proximity-Induced Anomalous Hall Effect in (BiSb)Te Thin Film Grown on CrGeTe Substrate.
作者信息
Yao Xiong, Gao Bin, Han Myung-Geun, Jain Deepti, Moon Jisoo, Kim Jae Wook, Zhu Yimei, Cheong Sang-Wook, Oh Seongshik
机构信息
Center for Quantum Materials Synthesis and Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.
Department of Physics and Astronomy , Rice University , Houston , Texas 77005 , United States.
出版信息
Nano Lett. 2019 Jul 10;19(7):4567-4573. doi: 10.1021/acs.nanolett.9b01495. Epub 2019 Jun 13.
Quantum anomalous Hall effect (QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators (TIs) due to limitations inherent with the doping process. In an effort to boost the quantization temperature of QAHE, the magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BiSb)Te (BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CrGeTe (CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical matches for magnetic insulator/TI proximity systems.
由于掺杂过程固有的局限性，量子反常霍尔效应（QAHE）只能在磁掺杂拓扑绝缘体（TIs）的极低温度下实现。为了提高QAHE的量子化温度，人们对磁绝缘体/TI异质结构中的磁近邻效应进行了广泛研究。然而，观察到的反常霍尔电阻从未超过几欧姆，这可能是由于结构和化学不匹配导致的界面无序。在这里，我们表明，通过在结构和化学匹配良好的铁磁绝缘CrGeTe（CGT）衬底上生长（BiSb）Te（BST）薄膜，近邻诱导的反常霍尔电阻可以提高一个数量级以上。这揭示了结构和化学匹配对于磁绝缘体/TI近邻系统的重要性。
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