Clarendon Laboratory, Department of Physics University of Oxford, Parks Road, Oxford, OX1 3PU, UK.
Adv Mater. 2023 Jul;35(27):e2102427. doi: 10.1002/adma.202102427. Epub 2021 Oct 19.
Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb) Te films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.
拓扑绝缘体 (TI) 由于其大的自旋轨道耦合和无耗散的、反向传播的表面态传导通道,为未来的自旋电子学提供了诱人的前景。拓扑性质和磁有序的结合可以导致新的量子态,包括首次在 Cr 掺杂 (Bi,Sb) Te 薄膜中实验实现的量子反常霍尔效应。由于磁性掺杂会引入有害影响,需要非常低的工作温度,因此需要探索替代方法。与磁有序系统的近邻耦合是一个明显的选择,可以提高观察各种量子效应的温度。这里,我们综述了 TI 异质结构中的近邻耦合和界面效应,这为这些令人兴奋的材料的磁性和拓扑性质的调控提供了一个通用的材料平台。首先介绍了分子束外延生长异质结构以及合适的结构、电子和磁性表征技术。超越过渡金属掺杂和未掺杂 TI 异质结构,讨论了包括稀土掺杂 TI、磁性绝缘体和反铁磁体的异质结构,这些异质结构导致了诸如 skyrmions 和交换偏置等奇异现象。最后,对包括本征磁性 TI 和包括 2D 材料在内的系统等新型异质结构进行了展望。