Schmitt Sebastian W, Schwarzburg Klaus, Dubourdieu Catherine
Institute Functional Oxides for Energy-Efficient Information Technology, Helmholtz - Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin, Germany.
Institute for Solar Fuels, Helmholtz - Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin, Germany.
Sci Rep. 2019 Jun 21;9(1):9024. doi: 10.1038/s41598-019-45034-0.
Inversely tapered silicon photonic resonators on silicon substrates were shown to host multiple high-Q whispering gallery modes and constitute versatile building blocks for CMOS compatible solid state lighting, optical sensing and modulator devices. So far, numerical analyses by the finite difference time domain method have been used to predict the height distribution of whispering gallery modes in such resonators. In this study, we provide an experimental evidence of this mode distribution along the resonator height by selectively exciting whispering gallery modes using cathodoluminescence spectroscopy. Further we derive analytical functions that permit to relate the height distribution of modes with a defined polarization, symmetry and effective refractive index to the geometrical shape of the inversely tapered resonators.
硅衬底上的倒锥形硅光子谐振器被证明能承载多个高品质回音壁模式，并构成用于CMOS兼容固态照明、光学传感和调制器器件的通用构建模块。到目前为止，已使用时域有限差分法进行数值分析来预测此类谐振器中回音壁模式的高度分布。在本研究中，我们通过使用阴极发光光谱选择性激发回音壁模式，提供了沿谐振器高度的这种模式分布的实验证据。此外，我们推导了分析函数，这些函数能够将具有确定偏振、对称性和有效折射率的模式高度分布与倒锥形谐振器的几何形状联系起来。
