Brandus Catalina-Alice, Hau Stefania, Broasca Alin, Greculeasa Madalin, Voicu Flavius-Marian, Gheorghe Cristina, Gheorghe Lucian, Dascalu Traian
National Institute for Laser, Plasma and Radiation Physics, Laboratory of Solid-State Quantum Electronics, Atomistilor 409, Magurele 077125, Ilfov, Romania.
Doctoral School of Physics, University of Bucharest, Faculty of Physics, Magurele 077125, Ilfov, Romania.
Materials (Basel). 2019 Jun 22;12(12):2005. doi: 10.3390/ma12122005.
A 5.0-at.% Nd-doped LaGdSc(BO) (Nd:LGSB) borate laser crystal was successfully grown by the Czochralski method, for the first time to our knowledge. The spectroscopic properties of the grown crystal are discussed and 1 µm laser emission, under end-pumping with a fiber-coupled diode laser at 807 nm, is reported. A -cut Nd:LGSB medium yielded 1.35 W continuous-wave output power at 0.63 overall optical-to-optical efficiency, with respect to the absorbed pump power, together with the high 0.68 slope efficiency. With an -cut Nd:LGSB sample, 0.81 W output power at 0.52 optical-to-optical efficiency was obtained. The laser emission performances under quasi-continuous wave pumping are presented as well, for both -cut and -cut crystals. Passive Q-switching was investigated with a semiconductor saturable absorber mirror (SESAM). Laser pulses with 2.2 µJ energy and 32.8 ns durations were recorded from -cut Nd:LGSB. The average output power reached 0.36 W at 1.55 W absorbed pump power. Passive mode-locking with SESAM was achieved in a long Z-type resonator. Ultrashort pulses with 0.19 W average power, 1.63 nJ energy, and 1.43 ps pulse duration, at 118 MHz repetition rate, are demonstrated for the -cut Nd:LGSB medium.
据我们所知,首次采用提拉法成功生长出了5.0原子百分比钕掺杂的镧钆钪硼酸盐(Nd:LGSB)硼酸盐激光晶体。讨论了生长晶体的光谱特性,并报道了在807nm光纤耦合二极管激光器端面泵浦下的1μm激光发射。对于A切割的Nd:LGSB介质,相对于吸收的泵浦功率,在0.63的总光光效率下产生了1.35W的连续波输出功率,同时斜率效率高达0.68。对于θ切割的Nd:LGSB样品,在0.52的光光效率下获得了0.81W的输出功率。还给出了θ切割和θ切割晶体在准连续波泵浦下的激光发射性能。用半导体可饱和吸收镜(SESAM)研究了被动调Q。从θ切割的Nd:LGSB记录到能量为2.2μJ、持续时间为32.8ns的激光脉冲。在1.55W的吸收泵浦功率下,平均输出功率达到0.36W。在长Z型腔中实现了用SESAM的被动锁模。对于θ切割的Nd:LGSB介质,展示了重复频率为118MHz、平均功率为0.19W、能量为1.63nJ、脉冲持续时间为1.43ps的超短脉冲。