Shojaei Iraj Abbasian, Linser Samuel, Jnawali Giriraj, Wickramasuriya N, Jackson Howard E, Smith Leigh M, Kargar Fariborz, Balandin Alexander A, Yuan Xiaoming, Caroff Philip, Tan Hark Hoe, Jagadish Chennupati
Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States.
Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States.
Nano Lett. 2019 Aug 14;19(8):5062-5069. doi: 10.1021/acs.nanolett.9b01345. Epub 2019 Jul 2.
We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.
我们利用瞬态瑞利散射来研究单根GaAsSb/InP纳米线异质结构中热光激发载流子的热化过程。通过比较不显示显著热载流子效应的单根仅含GaAsSb纳米线与核壳纳米线中的能量损失率，我们发现InP壳层的存在在低温下显著抑制了纵向光学声子发射率，进而导致强烈的热载流子效应。
