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室温下孤对电子驱动的热电材料

Lone-Pair Electron-Driven Thermoelectrics at Room Temperature.

作者信息

Mukhopadhyay Saikat, Reinecke Thomas L

机构信息

NRC Research Associate at Naval Research Laboratory , Washington , DC 20375 , United States.

Naval Research Laboratory , Washington , DC 20375 , United States.

出版信息

J Phys Chem Lett. 2019 Jul 18;10(14):4117-4122. doi: 10.1021/acs.jpclett.9b01625. Epub 2019 Jul 9.

Abstract

Identifying materials with good electron transport and poor thermal transport properties for thermoelectric applications has been challenging. Here we report a series of new materials including TlTaSe and TlVS with promising thermoelectric properties giving thermoelectric figure of merit, ≈ 0.8 at room temperature using first-principles calculations. This high stems from the high electrical conductivity and ultralow thermal conductivity (κ). We calculate κ ≈ 0.1-0.2 W/m·K from a phonon Boltzmann's transport equation and κ ≈ 0.3-0.4 W/m·K from the two-channel model. Low phonon group velocities due to weakly bonded Tl atoms and strong anharmonicity associated with s lone electrons pair give rise to such a low κ in these systems.

摘要

识别具有良好电子传输性能和较差热传输性能的材料用于热电应用一直具有挑战性。在此,我们报告了一系列新材料,包括TlTaSe和TlVS,它们具有有前景的热电性能,通过第一性原理计算在室温下热电优值约为0.8。这种高优值源于高电导率和超低热导率(κ)。我们从声子玻尔兹曼输运方程计算出κ≈0.1 - 0.2 W/m·K,从双通道模型计算出κ≈0.3 - 0.4 W/m·K。由于Tl原子键合较弱导致的低声子群速度以及与s孤对电子相关的强非谐性,使得这些体系具有如此低的κ。

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