Kim Sunho, Kim Jungwoo, Kim Daekyoung, Kim Bongsung, Chae Heeyeop, Yi Hyunjung, Hwang Byungil
Post-Silicon Semiconductor Institute , Korea Institute of Science and Technology , Seoul 02792 , Republic of Korea.
Nano-Convergence Mechanical Systems Research Division , Korea Institute of Machinery & Materials , Daejeon 34103 , Republic of Korea.
ACS Appl Mater Interfaces. 2019 Jul 24;11(29):26333-26338. doi: 10.1021/acsami.9b05969. Epub 2019 Jul 9.
Patchable electrodes are attractive for applications in optoelectronic devices because of their easy and reliable processability. However, development of reliable patchable transparent electrodes (TEs) with high optoelectronic performance is challenging; till now, optoelectronic devices fabricated with patchable TEs have been exhibiting limited performance. In this study, Ag nanowire (AgNW)/poly(methyl methacrylate) (PMMA) patchable TEs are developed and the highly efficient transparent quantum dot light-emitting diodes (QLEDs) using the patchable TEs are fabricated. AgNWs with optimized optoelectronic properties (figure of merit ≈ 3.3 × 10) are coated by an ultrathin PMMA nanolayer and transferred to thermal release tapes that enable physical attachment of TEs on the QLEDs without a significant damage to the adjacent active layer. The transparent QLEDs using patchable transparent top electrodes display excellent performance, with the maximum total luminance and current efficiency of 27 310 cd·m and 45.99 cd·A, respectively. Fabricated by all-solution-based processes, these QLEDs exhibit the best performance to date among devices adopting patchable top electrodes.
可贴片电极因其易于加工且可靠，在光电器件应用中颇具吸引力。然而，开发具有高光电性能的可靠可贴片透明电极（TEs）具有挑战性；到目前为止，用可贴片TEs制造的光电器件性能有限。在本研究中，开发了银纳米线（AgNW）/聚甲基丙烯酸甲酯（PMMA）可贴片TEs，并制造了使用该可贴片TEs的高效透明量子点发光二极管（QLEDs）。具有优化光电性能（品质因数≈3.3×10）的AgNWs被超薄PMMA纳米层包覆，并转移到热释放带上，这使得TEs能够物理附着在QLEDs上，而不会对相邻的有源层造成显著损坏。使用可贴片透明顶部电极的透明QLEDs表现出优异的性能，最大总亮度和电流效率分别为27310 cd·m²和45.99 cd·A。这些QLEDs通过全溶液法制造，在采用可贴片顶部电极的器件中展现出了迄今为止最佳的性能。
