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超越重p区元素的化学精度:Ga-Kr、In-Xe和Tl-Rn的第一电离能和电子亲和能

Beyond chemical accuracy in the heavy p-block: The first ionization potentials and electron affinities of Ga-Kr, In-Xe, and Tl-Rn.

作者信息

Finney Brian A, Peterson Kirk A

机构信息

Department of Chemistry, Washington State University, Pullman, Washington 99164-4630, USA.

出版信息

J Chem Phys. 2019 Jul 14;151(2):024303. doi: 10.1063/1.5110174.

DOI:10.1063/1.5110174
PMID:31301726
Abstract

A relativistic coupled-cluster version of the Feller-Peterson-Dixon composite method has been used to accurately calculate the first ionization potentials (IPs) and electron affinities (EAs) of the post-d, p-block elements Ga-Rn. Complete basis set extrapolations including outer-core correlation at the CCSD(T) level of theory were combined with contributions from higher order electron correlation up to CCSDTQ, quantum electrodynamic effects (Lamb shift), and spin-orbit (SO) coupling including the Gaunt contribution. Several methods for including SO were investigated, in which all involved the four-component (4c) Dirac-Coulomb (DC) Hamiltonian. The treatment of SO coupling was the contribution that limited the final accuracy of the present results. In the cases where 4c-DC-CCSD(T) could be reliably used for the SO contributions, the final composite IPs and EAs agreed with the available experimental values to within an unsigned average error of just 0.16 and 0.20 kcal/mol, respectively. In all cases, the final IPs and EAs were within 1 kcal/mol of the available experimental values, except for the EAs of the group 13 elements (Ga, In, and Tl), where the currently accepted experimental values appear to be too large by as much as 4 kcal/mol. The values predicted in this work, which have estimated uncertainties of ±0.5 kcal/mol, are 5.25 (Ga), 7.69 (In), and 7.39 (Tl) kcal/mol. For the EAs of Po and At, which do not have experimental values, the current calculations predict values of 34.2 and 55.8 kcal/mol with estimated uncertainties of ±0.6 and ±0.3 kcal/mol, respectively.

摘要

已采用费勒 - 彼得森 - 迪克森复合方法的相对论耦合簇版本,精确计算了d区和p区后几个元素(镓 - 氡)的第一电离势(IP)和电子亲和能(EA)。在耦合簇单双激发理论(CCSD(T))水平下,结合外层电子相关的完备基组外推法,以及高达耦合簇单双三激发四元组理论(CCSDTQ)的高阶电子相关贡献、量子电动力学效应(兰姆位移)和包括冈特贡献的自旋 - 轨道(SO)耦合。研究了几种包含SO的方法,所有这些方法都涉及四分量(4c)狄拉克 - 库仑(DC)哈密顿量。SO耦合的处理是限制当前结果最终精度的因素。在4c - DC - CCSD(T)可可靠用于SO贡献的情况下,最终的复合IP和EA与现有实验值的无符号平均误差分别仅为0.16和0.20千卡/摩尔。在所有情况下,最终的IP和EA与现有实验值的误差在1千卡/摩尔以内,但第13族元素(镓、铟和铊)的EA除外,目前公认的实验值似乎比实际值大多达4千卡/摩尔。本工作预测的值估计不确定度为±0.5千卡/摩尔,分别为5.25(镓)、7.69(铟)和7.39(铊)千卡/摩尔。对于没有实验值的钋和砹的EA,当前计算预测值分别为34.2和55.8千卡/摩尔,估计不确定度分别为±0.6和±0.3千卡/摩尔。

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