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一种用于光电共激发场下电子发射行为的原位表征技术:垂直少层石墨烯个体的研究

An in situ characterization technique for electron emission behavior under a photo-electric-common-excitation field: study on the vertical few-layer graphene individuals.

作者信息

Shen Yan, Xing Yang, Wang Hao, Xu Ningsheng, Gong Li, Wen Jinxiu, Chen Xuexian, Zhan Runze, Chen Huanjun, Zhang Yu, Liu Fei, Chen Jun, She Juncong, Deng Shaozhi

机构信息

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China.

出版信息

Nanotechnology. 2019 Nov 1;30(44):445202. doi: 10.1088/1361-6528/ab3609.

Abstract

The in situ characterization on the individuals offers an effective way to explore the dynamic behaviors and underlying physics of materials at the nanoscale, and this is of benefit for actual applications. In the field of vacuum micro-nano electronics, the existing in situ techniques can obtain the material information such as structure, morphology and composition in the process of electron emission driven by a single source of excitation. However, the relevant process and mechanism become more complicated when two or more excitation sources are commonly acted on the emitters. In this paper, we present an in situ nano characterization technique to trigger and record the electron emission behavior under the photo-electric-common-excitation multiple physical fields. Specifically, we probed into the in situ electron emission from an individual vertical few-layer graphene (vFLG) emitter under a laser-plus-electrostatic driving field. Electrons were driven out from the vFLG's emission edge, operated in situ under an external electrostatic field coupled with a 785 nm continuous-wave laser-triggered optical field. The incident light has been demonstrated to significantly improve the electron emission properties of graphene, which were recorded as an obvious decrease of the turn-on voltage, a higher emission current by factor of 35, as well as a photo-response on-off ratio as high as 5. More importantly, during their actual electron emission process, a series of in situ characterizations such as SEM observation and Raman spectra were used to study the structure, composition and even real-time Raman frequency changes of the emitters. These information can further reveal the key factors for the electron emission properties, such as field enhancement, work function and real-time surface temperature. Thereafter, the emission mechanism of vFLG in this study has been semi-quantitatively demonstrated to be the two concurrent processes of photon-assisted thermal enhanced field emission and photo field emission.

摘要

对个体进行原位表征为探索纳米尺度下材料的动态行为及潜在物理特性提供了一种有效方法,这对实际应用有益。在真空微纳电子学领域,现有的原位技术能够在单一激发源驱动电子发射的过程中获取诸如结构、形态和成分等材料信息。然而,当两个或更多激发源共同作用于发射体时,相关过程和机制会变得更加复杂。在本文中,我们提出了一种原位纳米表征技术,用于触发和记录光电共同激发多物理场下的电子发射行为。具体而言,我们探究了在激光加静电驱动场下单个垂直少层石墨烯(vFLG)发射体的原位电子发射。电子从vFLG的发射边缘被驱出,在与785 nm连续波激光触发光场耦合的外部静电场中进行原位操作。已证明入射光可显著改善石墨烯的电子发射特性,记录显示开启电压明显降低、发射电流提高了35倍,以及光响应开关比高达5。更重要的是,在其实际电子发射过程中,利用一系列原位表征手段,如扫描电子显微镜(SEM)观察和拉曼光谱,来研究发射体的结构、成分甚至实时拉曼频率变化。这些信息能够进一步揭示影响电子发射特性的关键因素,如场增强、功函数和实时表面温度。此后,本研究中vFLG的发射机制已被半定量地证明为光子辅助热增强场发射和光场发射这两个并发过程。

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