Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, Department of Electronic Science & Technology, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China.
Nanoscale. 2014 Jul 21;6(14):8306-10. doi: 10.1039/c3nr06015b.
Field electron emission properties of solution processed few-layer Bi₂Se₃ nanosheets are studied for the first time, which exhibit a low turn-on field of 2.3 V μm(-1), a high field enhancement factor of up to 6860 and good field emission stability. This performance is better than that of the as reported layered MoS₂f sheets and is comparable to that of single layer graphene films. The efficient field emission behaviours are found to be not only attributed to their lower work function but also related to their numerous sharp edges or protrusion decorated structure based on our simulation results. Besides, the contribution of possible two-dimensional electron gas surface states of atom-thick layered Bi₂Se₃ nanosheets is discussed in this paper. We anticipate that these solution processed layered Bi₂Se₃ nanosheets have great potential as robust high-performance vertical structure electron emitters for future light weight and highly flexible vacuum micro/nano-electronic device applications.
首次研究了溶液处理的少层 Bi₂Se₃ 纳米片的场电子发射特性，其开启场低至 2.3 V μm(-1)，场增强因子高达 6860，场发射稳定性好。这种性能优于已报道的层状 MoS₂f 片，与单层石墨烯薄膜相当。我们的模拟结果表明，高效的场发射行为不仅归因于其较低的功函数，还与它们众多的尖锐边缘或突出装饰结构有关。此外，本文还讨论了原子层厚的 Bi₂Se₃ 纳米片二维电子气表面态的可能贡献。我们预计，这些溶液处理的层状 Bi₂Se₃ 纳米片有望成为未来轻量级和高灵活性真空微纳电子器件应用中坚固的高性能垂直结构电子发射器。
