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静息态电压门控钠离子通道的结构和门控机制。

Resting-State Structure and Gating Mechanism of a Voltage-Gated Sodium Channel.

机构信息

Department of Pharmacology, University of Washington, Seattle, WA 98195, USA.

Department of Pharmacology, University of Washington, Seattle, WA 98195, USA; Department of Biological Structure, University of Washington, Seattle, WA 98195, USA.

出版信息

Cell. 2019 Aug 8;178(4):993-1003.e12. doi: 10.1016/j.cell.2019.06.031. Epub 2019 Jul 25.

Abstract

Voltage-gated sodium (Na) channels initiate action potentials in nerve, muscle, and other electrically excitable cells. The structural basis of voltage gating is uncertain because the resting state exists only at deeply negative membrane potentials. To stabilize the resting conformation, we inserted voltage-shifting mutations and introduced a disulfide crosslink in the VS of the ancestral bacterial sodium channel NaAb. Here, we present a cryo-EM structure of the resting state and a complete voltage-dependent gating mechanism. The S4 segment of the VS is drawn intracellularly, with three gating charges passing through the transmembrane electric field. This movement forms an elbow connecting S4 to the S4-S5 linker, tightens the collar around the S6 activation gate, and prevents its opening. Our structure supports the classical "sliding helix" mechanism of voltage sensing and provides a complete gating mechanism for voltage sensor function, pore opening, and activation-gate closure based on high-resolution structures of a single sodium channel protein.

摘要

电压门控钠离子(Na)通道在神经、肌肉和其他可兴奋细胞中引发动作电位。电压门控的结构基础尚不确定,因为静息状态仅存在于膜电位深负值。为了稳定静息构象,我们在祖先细菌钠通道 NaAb 的 VS 中插入了电压移位突变和二硫键交联。在这里,我们呈现了静息状态的低温电子显微镜结构和完整的电压依赖性门控机制。VS 的 S4 片段被拉向细胞内,三个门控电荷穿过跨膜电场。这种运动形成一个连接 S4 和 S4-S5 接头的肘,使围绕 S6 激活门的环收紧,并防止其打开。我们的结构支持经典的“滑动螺旋”电压感应机制,并提供了基于单个钠通道蛋白的高分辨率结构的电压传感器功能、孔道开放和激活门关闭的完整门控机制。

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