Heiss Martin C, Fernández-Quintero Monica L, Campiglio Marta, El Ghaleb Yousra, Pelizzari Simone, Loeffler Johannes R, Liedl Klaus R, Tuluc Petronel, Flucher Bernhard E
Institute of Physiology, Department of Physiology and Medical Biophysics, Medical University Innsbruck , Innsbruck, Austria.
Institute of General, Inorganic and Theoretical Chemistry, University of Innsbruck , Innsbruck, Austria.
J Gen Physiol. 2025 Sep 1;157(5). doi: 10.1085/jgp.202513769. Epub 2025 Aug 4.
Voltage-sensing domains (VSDs) are highly conserved protein modules that regulate the activation of voltage-gated ion channels. In response to membrane depolarization, positive gating charges in the S4 helix of VSDs move across the membrane electric field, which is focused at the hydrophobic constriction site (HCS) in the center of the VSD. This conformational change is translated into opening of the channel gate. Transient interactions of the gating charges with negatively charged countercharges in the adjacent helices are critical for catalyzing this state transition and for determining its voltage dependence and kinetics. However, the mechanism by which the sequential interactions between the multiple gating- and countercharges regulate these properties remains poorly understood. Here, we analyze the state transitions of the first VSD of CaV1.1 using MD simulation of the channel exposed to an electric field and site-directed mutagenesis of gating and countercharges to investigate the role of their interactions in determining the gating properties of CaV1.1. Alanine substitutions of gating charges differentially altered the kinetics or voltage dependence of activation, depending on whether they pass the HCS (R2 and R3) or not (K0, R1, and R4). Alanine substitutions of countercharges differentially altered kinetics and voltage dependence, depending on whether they facilitate the transfer of gating charges across the HCS (E100 and D126), and whether they stabilize the activated (E87, E90, and E140) or the resting state (E100, D126). Thus, our results reveal basic mechanistic principles by which variable interactions between gating charges and countercharges regulate the gating properties of voltage-gated calcium channels.
电压传感结构域(VSDs)是高度保守的蛋白质模块,可调节电压门控离子通道的激活。响应膜去极化,VSDs的S4螺旋中的正向门控电荷穿过膜电场,该电场集中在VSD中心的疏水收缩位点(HCS)。这种构象变化转化为通道门的开放。门控电荷与相邻螺旋中带负电的反电荷的瞬时相互作用对于催化这种状态转变以及确定其电压依赖性和动力学至关重要。然而,多个门控电荷和反电荷之间的顺序相互作用调节这些特性的机制仍知之甚少。在这里,我们使用暴露于电场的通道的分子动力学模拟以及门控电荷和反电荷的定点诱变来分析CaV1.1的第一个VSD的状态转变,以研究它们的相互作用在确定CaV1.1门控特性中的作用。门控电荷的丙氨酸取代根据它们是否通过HCS(R2和R3)而不同地改变激活的动力学或电压依赖性(K0、R1和R4)则不会)。反电荷的丙氨酸取代根据它们是否促进门控电荷穿过HCS(E100和D126)以及它们是否稳定激活态(E87、E90和E140)或静息态(E100、D126)而不同地改变动力学和电压依赖性。因此,我们的结果揭示了门控电荷和反电荷之间的可变相互作用调节电压门控钙通道门控特性的基本机制原理。