Apte Amey, Krishnamoorthy Aravind, Hachtel Jordan A, Susarla Sandhya, Yoon Jongwon, Sassi Lucas M, Bharadwaj Palash, Tour James M, Idrobo Juan Carlos, Kalia Rajiv K, Nakano Aiichiro, Vashishta Priya, Tiwary Chandra Sekhar, Ajayan Pulickel M
Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States.
Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences , University of Southern California , Los Angeles , California 90007 , United States.
Nano Lett. 2019 Sep 11;19(9):6338-6345. doi: 10.1021/acs.nanolett.9b02476. Epub 2019 Aug 9.
Two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures have been proposed as potential candidates for a variety of applications like quantum computing, neuromorphic computing, solar cells, and flexible field effective transistors. The 2D TMDC heterostructures at the present stage face difficulties being implemented in these applications because of lack of large and sharp heterostructure interfaces. Herein, we address this problem via a CVD technique to grow thermodynamically stable heterostructure of 2H/1T' MoSe-ReSe using conventional transition metal phase diagrams as a reference. We demonstrate how the thermodynamics of mixing in the MoReSe system during CVD growth dictates the formation of atomically sharp interfaces between MoSe and ReSe, which can be confirmed by high-resolution scanning transmission electron microscopy imaging, revealing zigzag selenium-terminated interface between the epitaxial 2H and 1T' lattices. Our work provides useful insights for understanding the stability of 2D heterostructures and interfaces between chemically, structurally, and electronically different phases.
二维（2D）过渡金属二硫属化物（TMDC）异质结构已被提议作为量子计算、神经形态计算、太阳能电池和柔性场效应晶体管等各种应用的潜在候选材料。由于缺乏大尺寸且清晰的异质结构界面，现阶段的二维TMDC异质结构在这些应用中面临实施困难。在此，我们通过化学气相沉积（CVD）技术解决这一问题，以传统过渡金属相图为参考，生长热力学稳定的2H/1T' MoSe-ReSe异质结构。我们展示了在CVD生长过程中MoReSe系统中的混合热力学如何决定MoSe和ReSe之间原子级清晰界面的形成，这可以通过高分辨率扫描透射电子显微镜成像得到证实，揭示了外延2H和1T'晶格之间锯齿状硒端接界面。我们的工作为理解二维异质结构以及化学、结构和电子性质不同相之间界面的稳定性提供了有用的见解。
