DeNigris N S, Chervenak J A, Bandler S R, Chang M P, Costen N P, Eckart M E, Ha J Y, Kilbourne C A, Smith S J
NASA GSFC, 8800 Greenbelt Road, Greenbelt, MD 20771, USA.
Stinger Ghaffarian Technologies, 7515 Mission Drive, Suite 300, Seabrook, MD 20706, USA.
J Low Temp Phys. 2018 Dec;193(5-6):687-694. doi: 10.1007/s10909-018-2019-8. Epub 2018 Jul 21.
The X-ray integral field unit (X-IFU) is a cryogenic spectrometer for the Advanced Telescope for High ENergy Astrophysics (ATHENA). ATHENA is a planned next-generation space-based X-ray observatory with capabilities that surpass the spectral resolution of prior missions. Proposed device designs contain up to 3840 transition edge sensors, each acting as an individual pixel on the detector, presenting a unique challenge for wiring superconducting leads in the focal plane assembly. In prototypes that require direct wiring, the edges of X-IFU focal plane have hosted aluminum wirebonding pads; however, indium (In) 'bumps' deposited on an interface layer such as molybdenum nitride (MoN) can instead be used as an array of superconducting interconnects. We investigated bumped MoN:In structures with different process cleans and layer thicknesses. Measurements of the resistive transitions showed variation of transition temperature as a function of bias and generally differed from the expected bulk of In (3.41 K). Observed resistance of the In bump structures at temperatures below the MoN transition (at 8.0 K) also depended on the varied parameters. For our proposed X-IFU geometry (10 μm of In mated to a 1-μm In bump), we measured a minimum of 3.14 K at a bias current of 3 mA and a normal resistance of 0.59 mΩ per interconnect. We also investigated the design and fabrication of superconducting niobium (Nb) microstrip atop flexible polyimide. We present a process for integrating In bumps with the flexible Nb leads to enable high-density wiring for the ATHENA X-IFU focal plane.
X射线积分场单元(X-IFU)是用于高能天体物理学先进望远镜(ATHENA)的低温光谱仪。ATHENA是一个计划中的下一代天基X射线天文台,其能力超越了先前任务的光谱分辨率。提议的设备设计包含多达3840个过渡边缘传感器,每个传感器在探测器上充当一个单独的像素,这给焦平面组件中超导引线的布线带来了独特的挑战。在需要直接布线的原型中,X-IFU焦平面的边缘设有铝丝焊盘;然而,沉积在诸如氮化钼(MoN)等界面层上的铟(In)“凸块”可以用作超导互连阵列。我们研究了具有不同工艺清洁度和层厚度的带凸块MoN:In结构。电阻转变的测量显示转变温度随偏置而变化,并且通常与预期的铟体转变温度(3.41 K)不同。在低于MoN转变温度(8.0 K)的温度下观察到的In凸块结构的电阻也取决于变化的参数。对于我们提议的X-IFU几何结构(10μm的In与1μm的In凸块配合),我们在3 mA的偏置电流下测量到最低转变温度为3.14 K,每个互连的正常电阻为0.59 mΩ。我们还研究了柔性聚酰亚胺上超导铌(Nb)微带的设计和制造。我们提出了一种将In凸块与柔性Nb引线集成的工艺,以实现ATHENA X-IFU焦平面的高密度布线。