Yerpude Mangesh M, Chopra Vibha, Dhoble N S, Kadam R M, Krupski Aleksander R, Dhoble S J
Department of Physics, R.T.M. Nagpur University, Nagpur, 440033, India.
P.G. Department of Physics and Electronics, DAV College, Amritsar, 143001, Punjab, India.
Luminescence. 2019 Dec;34(8):933-944. doi: 10.1002/bio.3694. Epub 2019 Jul 31.
LiMgBO :Dy , a low Z material was prepared using the solution combustion method and its luminescence properties were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), thermoluminescence (TL), photoluminescence (PL), Fourier transform infrared spectroscopy, and electron paramagnetic resonance (EPR) techniques. Reitvield refinement was also performed for the structural studies. The PL emission spectra for LiMgBO :Dy consisted of two peaks at 478 due to the F → H magnetic dipole transition and at 572 nm due to the hypersensitive F → H electric dipole transition of Dy , respectively. A TL study was carried out for both the γ-ray-irradiated sample and the C irradiated samples and was found to show high sensitivity for both. Moreover the γ-ray-irradiated LiMgBO :Dy sample showed linearity in the dose range 10 Gy to 1 kGy and C -irradiated samples show linearity in the fluence range 2 × 10 to 1 × 10 ions/cm . In the present study, the initial rise method, various heating rate method, the whole glow curve method, glow curve convolution deconvolution function, and Chen's peak shape method were used to calculate kinetic parameters to understand the TL glow curve mechanism in detail. Finally, an EPR study was performed to examine the radicals responsible for the TL process.
采用溶液燃烧法制备了低Z材料LiMgBO :Dy,并利用X射线衍射(XRD)、扫描电子显微镜(SEM)、热释光(TL)、光致发光(PL)、傅里叶变换红外光谱和电子顺磁共振(EPR)技术研究了其发光性能。还进行了里特韦尔德精修以进行结构研究。LiMgBO :Dy的PL发射光谱分别由Dy的478nm处由于F→H磁偶极跃迁产生的一个峰和572nm处由于超灵敏的F→H电偶极跃迁产生的一个峰组成。对γ射线辐照样品和C辐照样品都进行了热释光研究,发现两者都具有高灵敏度。此外,γ射线辐照的LiMgBO :Dy样品在10 Gy至1 kGy的剂量范围内呈线性,C辐照样品在2×10至1×10离子/cm的注量范围内呈线性。在本研究中,使用初始上升法、各种加热速率法、整个发光曲线法、发光曲线卷积反卷积函数和陈的峰形法来计算动力学参数,以详细了解热释光发光曲线机制。最后,进行了电子顺磁共振研究以检查负责热释光过程的自由基。