Lim Z H, Quackenbush N F, Penn A N, Chrysler M, Bowden M, Zhu Z, Ablett J M, Lee T-L, LeBeau J M, Woicik J C, Sushko P V, Chambers S A, Ngai J H
Department of Physics, University of Texas-Arlington, Arlington, Texas 76019, USA.
Material Measurement Laboratory, Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Phys Rev Lett. 2019 Jul 12;123(2):026805. doi: 10.1103/PhysRevLett.123.026805.
We report charge transfer and built-in electric fields across the epitaxial SrNb_{x}Ti_{1-x}O_{3-δ}/Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.
我们报道了外延生长的SrNbₓTi₁₋ₓO₃₋δ/Si(001)界面上的电荷转移和内建电场。电输运测量表明在硅中形成了空穴气以及内建电场的存在。硬X射线光电子能谱测量揭示了由这些内建电场引起的芯能级谱中明显的不对称性。对芯能级谱的理论分析能够对内建电场以及由此产生的能带弯曲在异质结上进行空间映射。可调谐电荷转移、内建电场以及后者的空间映射的证明，为电耦合功能异质结的发展奠定了基础。
