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在实际温度和氧分压下用于调节TiO光吸收的非金属掺杂剂的稳定性:一项混合密度泛函理论研究。

Stability of non-metal dopants to tune the photo-absorption of TiO at realistic temperatures and oxygen partial pressures: A hybrid DFT study.

作者信息

Basera Pooja, Saini Shikha, Arora Ekta, Singh Arunima, Kumar Manish, Bhattacharya Saswata

机构信息

Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India.

出版信息

Sci Rep. 2019 Aug 6;9(1):11427. doi: 10.1038/s41598-019-47710-7.

Abstract

TiO anatase is considered to play a significant importance in energy and environmental research. However, for developing artificial photosynthesis with TiO, the major drawback is its large bandgap of 3.2 eV. Several non-metals have been used experimentally for extending the TiO photo-absorption to the visible region of the spectrum. It's therefore of paramount importance to provide theoretical guidance to experiment about the kind of defects that are thermodynamically stable at a realistic condition (e.g. Temperature (T), oxygen partial pressure ([Formula: see text]), doping). However, disentangling the relative stability of different types of defects (viz. substitution, interstitial, etc.) as a function of charge state and realistic T, [Formula: see text] is quite challenging. We report here using state-of-the-art first-principles based methodologies, the stability and meta-stability of different non-metal dopants X (X = N, C, S, Se) at various charge states and realistic conditions. The ground state electronic structure is very accurately calculated via density functional theory with hybrid functionals, whereas the finite T and [Formula: see text] effects are captured by ab initio atomistic thermodynamics under harmonic approximations. On comparing the defect formation energies at a given T and [Formula: see text] (relevant to the experiment), we have found that Se interstitial defect (with two hole trapped) is energetically most favored in the p-type region, whereas N substitution (with one electron trapped) is the most abundant defect in the n-type region to provide visible region photo-absorption in TiO. Our finding validates that the most stable defects in X doped TiO are not the neutral defects but the charged defects. The extra stability of [Formula: see text] is carefully analyzed by comparing the individual effect of bond-making/breaking and the charge carrier trapping energies.

摘要

锐钛矿型二氧化钛(TiO₂)被认为在能源和环境研究中具有重要意义。然而,对于利用TiO₂开发人工光合作用而言,其主要缺点是具有3.2电子伏特的大带隙。实验中已使用几种非金属来将TiO₂的光吸收扩展到光谱的可见光区域。因此,为实验提供关于在实际条件(例如温度(T)、氧分压([公式:见原文])、掺杂)下热力学稳定的缺陷类型的理论指导至关重要。然而,要弄清楚不同类型缺陷(即取代、间隙等)作为电荷状态和实际T、[公式:见原文]的函数的相对稳定性颇具挑战性。我们在此报告,使用基于最先进的第一性原理的方法,研究了不同非金属掺杂剂X(X = N、C、S、Se)在各种电荷状态和实际条件下的稳定性和亚稳定性。通过使用杂化泛函的密度泛函理论非常精确地计算了基态电子结构,而在谐波近似下通过从头算原子热力学捕获了有限T和[公式:见原文]效应。在比较给定T和[公式:见原文](与实验相关)下的缺陷形成能时,我们发现Se间隙缺陷(捕获两个空穴)在p型区域在能量上最有利,而N取代(捕获一个电子)是n型区域中最丰富的缺陷,以在TiO₂中提供可见光区域的光吸收。我们的发现验证了在X掺杂的TiO₂中最稳定的缺陷不是中性缺陷而是带电缺陷。通过比较成键/断键的个体效应和电荷载流子捕获能,仔细分析了[公式:见原文]的额外稳定性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5049/6684643/46dbf1225ab3/41598_2019_47710_Fig1_HTML.jpg

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