Basera Pooja, Saini Shikha, Arora Ekta, Singh Arunima, Kumar Manish, Bhattacharya Saswata
Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India.
Sci Rep. 2019 Aug 6;9(1):11427. doi: 10.1038/s41598-019-47710-7.
TiO anatase is considered to play a significant importance in energy and environmental research. However, for developing artificial photosynthesis with TiO, the major drawback is its large bandgap of 3.2 eV. Several non-metals have been used experimentally for extending the TiO photo-absorption to the visible region of the spectrum. It's therefore of paramount importance to provide theoretical guidance to experiment about the kind of defects that are thermodynamically stable at a realistic condition (e.g. Temperature (T), oxygen partial pressure ([Formula: see text]), doping). However, disentangling the relative stability of different types of defects (viz. substitution, interstitial, etc.) as a function of charge state and realistic T, [Formula: see text] is quite challenging. We report here using state-of-the-art first-principles based methodologies, the stability and meta-stability of different non-metal dopants X (X = N, C, S, Se) at various charge states and realistic conditions. The ground state electronic structure is very accurately calculated via density functional theory with hybrid functionals, whereas the finite T and [Formula: see text] effects are captured by ab initio atomistic thermodynamics under harmonic approximations. On comparing the defect formation energies at a given T and [Formula: see text] (relevant to the experiment), we have found that Se interstitial defect (with two hole trapped) is energetically most favored in the p-type region, whereas N substitution (with one electron trapped) is the most abundant defect in the n-type region to provide visible region photo-absorption in TiO. Our finding validates that the most stable defects in X doped TiO are not the neutral defects but the charged defects. The extra stability of [Formula: see text] is carefully analyzed by comparing the individual effect of bond-making/breaking and the charge carrier trapping energies.
锐钛矿型二氧化钛(TiO₂)被认为在能源和环境研究中具有重要意义。然而,对于利用TiO₂开发人工光合作用而言,其主要缺点是具有3.2电子伏特的大带隙。实验中已使用几种非金属来将TiO₂的光吸收扩展到光谱的可见光区域。因此,为实验提供关于在实际条件(例如温度(T)、氧分压([公式:见原文])、掺杂)下热力学稳定的缺陷类型的理论指导至关重要。然而,要弄清楚不同类型缺陷(即取代、间隙等)作为电荷状态和实际T、[公式:见原文]的函数的相对稳定性颇具挑战性。我们在此报告,使用基于最先进的第一性原理的方法,研究了不同非金属掺杂剂X(X = N、C、S、Se)在各种电荷状态和实际条件下的稳定性和亚稳定性。通过使用杂化泛函的密度泛函理论非常精确地计算了基态电子结构,而在谐波近似下通过从头算原子热力学捕获了有限T和[公式:见原文]效应。在比较给定T和[公式:见原文](与实验相关)下的缺陷形成能时,我们发现Se间隙缺陷(捕获两个空穴)在p型区域在能量上最有利,而N取代(捕获一个电子)是n型区域中最丰富的缺陷,以在TiO₂中提供可见光区域的光吸收。我们的发现验证了在X掺杂的TiO₂中最稳定的缺陷不是中性缺陷而是带电缺陷。通过比较成键/断键的个体效应和电荷载流子捕获能,仔细分析了[公式:见原文]的额外稳定性。