Matsubara Masahiko, Saniz Rolando, Partoens Bart, Lamoen Dirk
EMAT, Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
CMT, Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
Phys Chem Chem Phys. 2017 Jan 18;19(3):1945-1952. doi: 10.1039/c6cp06882k.
We investigate the role of transition metal atoms of group V-b (V, Nb, and Ta) and VI-b (Cr, Mo, and W) as n- or p-type dopants in anatase TiO using thermodynamic principles and density functional theory with the Heyd-Scuseria-Ernzerhof HSE06 hybrid functional. The HSE06 functional provides a realistic value for the band gap, which ensures a correct classification of dopants as shallow or deep donors or acceptors. Defect formation energies and thermodynamic transition levels are calculated taking into account the constraints imposed by the stability of TiO and the solubility limit of the impurities. Nb, Ta, W and Mo are identified as shallow donors. Although W provides two electrons, Nb and Ta show a considerably lower formation energy, in particular under O-poor conditions. Mo donates in principle one electron, but under specific conditions can turn into a double donor. V impurities are deep donors and Cr shows up as an amphoteric defect, thereby acting as an electron trapping center in n-type TiO especially under O-rich conditions. A comparison with the available experimental data yields excellent agreement.
我们运用热力学原理以及采用Heyd-Scuseria-Ernzerhof(HSE06)杂化泛函的密度泛函理论,研究了V族b组(V、Nb和Ta)和VI族b组(Cr、Mo和W)的过渡金属原子作为锐钛矿型TiO中的n型或p型掺杂剂的作用。HSE06泛函为带隙提供了一个现实的值,这确保了将掺杂剂正确分类为浅或深施主或受主。考虑到TiO稳定性和杂质溶解度极限所施加的限制,计算了缺陷形成能和热力学跃迁能级。Nb、Ta、W和Mo被确定为浅施主。虽然W提供两个电子,但Nb和Ta表现出相当低的形成能,特别是在贫氧条件下。Mo原则上捐赠一个电子,但在特定条件下可变成双施主。V杂质是深施主,Cr表现为两性缺陷,因此在富氧条件下尤其在n型TiO中充当电子俘获中心。与现有实验数据的比较产生了极好的一致性。