EaStCHEM School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, UK.
Department of Chemistry, University of Houston, 3585 Cullen Blvd, 112 Fleming Building, Houston, TX, 77204-5003, USA.
Adv Mater. 2019 Oct;31(40):e1903620. doi: 10.1002/adma.201903620. Epub 2019 Aug 7.
Since the observation that the properties of ferroic domain walls (DWs) can differ significantly from the bulk materials in which they are formed, it has been realized that domain wall engineering offers exciting new opportunities for nanoelectronics and nanodevice architectures. Here, a novel improper ferroelectric, CsNbW O , with the hexagonal tungsten bronze structure, is reported. Powder neutron diffraction and symmetry mode analysis indicate that the improper transition (T = 1100 K) involves unit cell tripling, reminiscent of the hexagonal rare earth manganites. However, in contrast to the manganites, the symmetry breaking in CsNbW O is electronically driven (i.e., purely displacive) via the second-order Jahn-Teller effect in contrast to the geometrically driven tilt mechanism of the manganites. Nevertheless CsNbW O displays the same kinds of domain microstructure as those found in the manganites, such as the characteristic six-domain "cloverleaf" vertices and DW sections with polar discontinuities. The discovery of a completely new material system, with domain patterns already known to generate interesting functionality in the manganites, is important for the emerging field of DW nanoelectronics.
自从观察到铁电畴壁(DW)的性质与形成它们的体材料有很大不同以来,人们已经意识到畴壁工程为纳米电子学和纳米器件架构提供了令人兴奋的新机会。在这里,报道了一种具有六方钨青铜结构的新型非理想铁电体 CsNbW O。粉末中子衍射和对称模式分析表明,不适当的转变(T = 1100 K)涉及单元胞的三倍化,类似于六方稀土锰氧化物。然而,与锰氧化物不同的是,CsNbW O 中的对称破缺是通过二级 Jahn-Teller 效应电子驱动的(即纯粹的位移),而锰氧化物的对称破缺机制是几何驱动的倾斜机制。尽管如此,CsNbW O 显示出与锰氧化物中相同的畴微观结构,例如特征的六畴“四叶草”顶点和具有极性不连续性的 DW 截面。完全新的材料系统的发现,其畴图案已经在锰氧化物中产生了有趣的功能,这对于新兴的 DW 纳米电子学领域非常重要。