铷（氢氧根）钨青铜的晶体结构与电阻特性
Crystal structure and electrical resistance property of Rb(HO) WS.
作者信息
Mao Yuanlv, Fang Yuqiang, Wang Dong, Bu Kejun, Wang Sishun, Zhao Wei, Huang Fuqiang
机构信息
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
出版信息
Acta Crystallogr E Crystallogr Commun. 2019 Jun 11;75(Pt 7):976-979. doi: 10.1107/S2056989019007941. eCollection 2019 Jul 1.
Rb(HO) WS, rubidium hydrate di-thio-tungstate, is a new quasi two-dimensional sulfide. Its crystal structure consists of ordered WS layers, separated by disordered Rb ions and water mol-ecules. All atomic sites are located on mirror planes. The WS layers are composed of edge-sharing [WS] octa-hedra and extend parallel to (001). The presence of structural water was revealed by thermogravimetry, but the position and exact amount could not be determined in the present study. The temperature dependence of the electrical resistance indicates that Rb(HO) WS is semiconducting between 80-300 K.
Rb(HO)WS，即水合铷二硫代钨酸盐，是一种新型的准二维硫化物。其晶体结构由有序的WS层组成，这些层被无序的铷离子和水分子分隔开。所有原子位置都位于镜面上。WS层由共边的[WS]八面体组成，并平行于(001)方向延伸。热重分析表明存在结构水，但在本研究中无法确定其位置和确切含量。电阻的温度依赖性表明，Rb(HO)WS在80 - 300 K之间是半导体。
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