Gui Pengbin, Zhou Hai, Yao Fang, Song Zehao, Li Borui, Fang Guojia
Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China.
Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics & Electronic Science, Hubei University, Wuhan, 430062, P. R. China.
Small. 2019 Sep;15(39):e1902618. doi: 10.1002/smll.201902618. Epub 2019 Aug 13.
Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I- or Br-based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl-based wide bandgap perovskites, such as CsPbCl , are scarcely reported because of the bad film quality of the spin-coated Cl-based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high-quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high-quality single crystal CsPbCl microplatelets (MPs) synthesized by a simple space-confined growth method at low temperature for near-ultraviolet (NUV) PDs are reported. The single CsPbCl MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 10 and a responsivity of 0.45 A W at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 10 Jones. Moreover, PDs possess good stability and repeatability.
具有可调检测波长的钙钛矿光电探测器(PDs)因其在成像、机器视觉和人工智能领域的潜在应用而备受关注。由于制备技术简单,大多数钙钛矿光电探测器都集中在基于碘或溴的材料上。然而,由于其较窄的带隙,它们的主要光电探测能力位于可见光区域。基于氯的宽带隙钙钛矿,如CsPbCl,由于旋涂的基于氯的钙钛矿薄膜质量差,前驱体溶解度低,报道很少。因此,使用高质量的全无机钙钛矿薄膜进行紫外探测,尤其是材料和器件具有高热稳定性,仍然是一个巨大的挑战。在这项工作中,报道了通过简单的低温空间限制生长方法合成的高质量单晶CsPbCl微片(MPs)用于近紫外(NUV)光电探测器。单个CsPbCl MP光电探测器对NUV光表现出良好的响应,在5 V时开/关比高达5.6×10,响应度为0.45 A W。此外,暗电流低至pA水平,探测率高达10琼斯。此外,光电探测器具有良好的稳定性和重复性。