Irfan Muhammad, Kamran Muhammad Arshad, Azam Sikander, Iqbal Muhammad Waqas, Alharbi Thamer, Majid Abdul, Omran S Bin, Khenata R, Bouhemadou A, Wang Xiaotian
Department of Physics, University of Sargodha, 40100, Sargodha, Pakistan.
Department of Physics, College of Science, Majmaah University, Al-Majmaah, 11952, Saudi Arabia.
J Mol Graph Model. 2019 Nov;92:296-302. doi: 10.1016/j.jmgm.2019.08.006. Epub 2019 Aug 10.
We performed ab initio calculations to study the structural and optoelectronic properties of simple and slab phase TaNO using density functional theory (DFT), in which the full potential augmented plane wave (FP-LAPW) method was implemented using the computational code Wien 2k. The modified Becke-Johnson potential (mBJ-GGA) was used for these calculations. The calculated band structure and electronic properties revealed an indirect bandgap for simple TaNO (3.2 eV) and a direct bandgap for slab TaNO (1.5 eV). The interband electronic transitions were investigated from the band structure, and transition peaks were observed from the imaginary part of the dielectric function. These transitions are due to Ta-p, N-p and O-p orbitals for simple TaNO and Ta-p, N-s as well as O-p orbitals for slab TaNO. The plasmon energy was related to the main peak of the energy loss function, which was approximately 10 eV. The static value of the dielectric constant and the refraction were close to the experimental values. In general, slab TaNO shows different properties and is more suitable for optoelectronic applications due to direct bandgap.
我们使用密度泛函理论(DFT)进行了从头算计算,以研究简单相和板状相TaNO的结构和光电性质,其中使用计算代码Wien 2k实现了全势增强平面波(FP-LAPW)方法。这些计算使用了修正的Becke-Johnson势(mBJ-GGA)。计算得到的能带结构和电子性质表明,简单TaNO的带隙为间接带隙(3.2 eV),板状TaNO的带隙为直接带隙(1.5 eV)。从能带结构研究了带间电子跃迁,并从介电函数的虚部观察到跃迁峰。对于简单TaNO,这些跃迁归因于Ta-p、N-p和O-p轨道;对于板状TaNO,跃迁归因于Ta-p、N-s以及O-p轨道。等离子体能量与能量损失函数的主峰相关,约为10 eV。介电常数和折射率的静态值接近实验值。总体而言,板状TaNO表现出不同的性质,由于其直接带隙,更适合用于光电应用。