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嵌入氧化铟薄膜中的金纳米颗粒的导电:从金属行为到绝缘行为的转变

Electrical conduction in gold nanoparticles embedded indium oxide films: a crossover from metallic to insulating behavior.

作者信息

Sen Prabal, Kar Durgesh, Laha Ranjit, Ananthan M R, Kasiviswanathan S

机构信息

Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.

出版信息

J Phys Condens Matter. 2019 Dec 18;31(50):505702. doi: 10.1088/1361-648X/ab3d1f.

Abstract

Electrical conductivity of indium oxide and gold nanoparticles incorporated indium oxide films grown by dc sputtering have been studied in the temperature range 1.5 to 300 K. Films with 0, 6 and 12% gold nanoparticle volume fraction exhibit metallic nature in the temperature interval 1.5 to 20 K, with conduction being governed by electron-electron interaction. Films with 20% gold nanoparticle volume fraction showed insulating nature and the conduction was governed by variable range hopping mechanism in the temperature range 1.5 to 50 K. Furthermore, a crossover from Efros-Shklovskii to Mott type was observed around 15 K. The transition from metallic to insulating nature in spite of the larger gold nanoparticle volume fraction is attributed to the inhibition of oxygen vacancies by Au species during film growth. At higher temperatures, all films exhibit activated conduction.

摘要

通过直流溅射生长的氧化铟以及掺入金纳米颗粒的氧化铟薄膜的电导率已在1.5至300 K的温度范围内进行了研究。金纳米颗粒体积分数为0%、6%和12%的薄膜在1.5至20 K的温度区间内表现出金属特性,其导电由电子 - 电子相互作用主导。金纳米颗粒体积分数为20%的薄膜表现出绝缘特性,在1.5至50 K的温度范围内,导电由变程跳跃机制主导。此外,在15 K左右观察到了从埃弗罗斯 - 什克洛夫斯基型到莫特型的转变。尽管金纳米颗粒体积分数较大,但从金属性到绝缘性的转变归因于薄膜生长过程中Au物种对氧空位的抑制。在较高温度下,所有薄膜均表现出激活导电。

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