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CrAl 端接的 CoCrAl 薄膜中的半金属性

Half-metallicity in CrAl-terminated CoCrAl thin film.

作者信息

Herran Juliana, Carlile Ryan, Kharel Parashu, Lukashev Pavel V

机构信息

Department of Chemistry and Biochemistry, University of Northern Iowa, Cedar Falls, IA 50614, United States of America.

出版信息

J Phys Condens Matter. 2019 Dec 11;31(49):495801. doi: 10.1088/1361-648X/ab3d6c. Epub 2019 Aug 21.

Abstract

Half-metals with high Curie temperature are ideal candidates for applications in spin-based electronics-an emerging technology utilizing a spin degree of freedom in electronic devices. Many half-metallic materials have been predicted theoretically, and some have been confirmed experimentally. At the same time, in thin-film geometry the electronic structure of these materials may change due to the potential presence of surface/interface states. This could limit practical applications of these materials in nano-size devices, since typically these states result in reduced spin-polarization. Here, from first principles we study a full Heusler compound, CoCrAl in thin film geometry. This material has been studied extensively, and it has been reported that it exhibits half-metallic properties in the bulk. We show contrary to the earlier reports that this material retains 100% spin polarization in CrAl-terminated thin film geometry (Co-termination results in destroyed half-metallicity). Moreover, we confirm that under biaxial strain CoCrAl retains half-metallicity for a practically feasible range of considered pressure, i.e. in principle it may stay half-metallic if used in thin-film heterostructures, where lattice mismatch is a common scenario. The magnetic alignment of CoCrAl is confirmed to be ferromagnetic, with the non-integer total magnetic moment of Co-terminated cell, and the integer total magnetic moment of CrAl-terminated cell, consistent with their corresponding non-half-metallic and half-metallic electronic structures. If confirmed experimentally, these results may have an important impact in spin-based electronics.

摘要

具有高居里温度的半金属是自旋电子学应用的理想候选材料——自旋电子学是一种在电子器件中利用自旋自由度的新兴技术。理论上已经预测出许多半金属材料,并且一些已通过实验得到证实。同时,在薄膜结构中,由于可能存在表面/界面态,这些材料的电子结构可能会发生变化。这可能会限制这些材料在纳米尺寸器件中的实际应用,因为通常这些态会导致自旋极化降低。在此,我们从第一性原理出发,研究了薄膜结构中的全Heusler化合物CoCrAl。这种材料已被广泛研究,并且已有报道称其在体相中表现出半金属特性。我们发现与早期报道相反,这种材料在CrAl端接的薄膜结构中保持100%的自旋极化(Co端接会导致半金属性被破坏)。此外,我们证实,在双轴应变下,CoCrAl在实际可行的压力范围内保持半金属性,即原则上如果用于薄膜异质结构中它可能保持半金属性,在薄膜异质结构中晶格失配是常见情况。CoCrAl的磁取向被确认为铁磁性,Co端接晶胞的总磁矩为非整数,CrAl端接晶胞的总磁矩为整数,这与它们相应的非半金属和半金属电子结构一致。如果实验得到证实,这些结果可能会对自旋电子学产生重要影响。

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