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钴掺杂全赫斯勒合金TiFeCoSn(=0.00、0.25、0.50、0.75或1.00)的(001)取向薄膜中的稳定半金属性。

Stable half-metallicity in the (001)-oriented thin films of Co-doped full-Heusler alloys TiFeCoSn (=0.00, 0.25, 0.50, 0.75 or 1.00).

作者信息

Muhammad Iltaf, Zhang Jian-Min, Ali Anwar, Mushtaq Muhammad, Muhammad Suleman

机构信息

College of Physics and Information Technology, Shaanxi Normal University, Xian 710119, Shaanxi, People's Republic of China.

Department of Physics, Women University of Azad Jammu & Kashmir, Bagh, 12500, Pakistan.

出版信息

J Phys Condens Matter. 2020 May 15;32(32). doi: 10.1088/1361-648X/ab832d.

Abstract

Thin films with stable half-metallic (HM) character and 100% spin-polarization (SP) are required to be used in spintronic devices. The HM character has been predicted theoretically in many Heusler alloys thin films and confirmed by experiments. Full-Heusler alloy TiFeSn has been studied extensively. It has been reported that their (001)-oriented thin films with TiFe or TiSn terminations preserve 100% SP, but the HM character is unstable because the edge of the bandgap is closed to the Fermi level. Therefore, we investigate the effects of the Co-doping on the structural, electronic and magnetic properties of the bulk full-Heusler alloys TiFeCoSn (= 0.00, 0.25, 0.50, 0.75 or 1.00) and their (001)-oriented thin films. The bulk TiFeCoSn (= 0.00, 0.25, 0.50, 0.75 or 1.00) alloys are all HM ferromagnets. We investigate twelve possible terminations and show that five of them preserve HM character with 100% SP at the Fermi level, while in the remaining seven, surface states emerge in the spin-down channel at the Fermi level, significantly reducing their SP. The Co-doping significantly increases the stability of the TiSn slab, also increases its spin-down bandgapEg↓and HM gapEgHMat= 0.50. The stable HM character makes it is a slab of maximum benefit in the applications of spintronic devices, especially in magnetic tunnel junctions.

摘要

自旋电子器件需要使用具有稳定半金属(HM)特性和100%自旋极化(SP)的薄膜。理论上已预测许多赫斯勒合金薄膜具有HM特性,并通过实验得到证实。全赫斯勒合金TiFeSn已得到广泛研究。据报道,其具有TiFe或TiSn终端的(001)取向薄膜保持100%的SP,但HM特性不稳定,因为带隙边缘接近费米能级。因此,我们研究了Co掺杂对块状全赫斯勒合金TiFeCoSn(= 0.00、0.25、0.50、0.75或1.00)及其(001)取向薄膜的结构、电子和磁性的影响。块状TiFeCoSn(= 0.00、0.25、0.50、0.75或1.00)合金均为HM铁磁体。我们研究了12种可能的终端,并表明其中5种在费米能级保持具有100%SP的HM特性,而在其余7种中,在费米能级的自旋向下通道中出现表面态,显著降低了它们的SP。Co掺杂显著提高了TiSn平板的稳定性,还增加了其自旋向下带隙Eg↓和HM间隙EgHM,在x = 0.50时。稳定的HM特性使其成为自旋电子器件应用中最有益的平板,尤其是在磁性隧道结中。

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