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一种用于非夹断电流-电压滞后回线的统一电容耦合忆阻模型。

A Unified Capacitive-Coupled Memristive Model for the Nonpinched Current-Voltage Hysteresis Loop.

作者信息

Sun Bai, Chen Yuanzheng, Xiao Ming, Zhou Guangdong, Ranjan Shubham, Hou Wentao, Zhu Xiaoli, Zhao Yong, Redfern Simon A T, Zhou Y Norman

机构信息

Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining , Waterloo Institute for Nanotechnology, University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada.

School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China) , Southwest Jiaotong University , Chengdu , Sichuan 610031 , China.

出版信息

Nano Lett. 2019 Sep 11;19(9):6461-6465. doi: 10.1021/acs.nanolett.9b02683. Epub 2019 Aug 27.

DOI:10.1021/acs.nanolett.9b02683
PMID:31434487
Abstract

The concept of the memristor, a resistor with memory, was proposed by Chua in 1971 as the fourth basic element of electric circuitry. Despite a significant amount of effort devoted to the understanding of memristor theory, our understanding of the nonpinched current-voltage (-) hysteresis loop in memristors remains incomplete. Here we propose a physical model of a memristor, with a capacitor connected in parallel, which explains how the nonpinched - hysteresis behavior originates from the capacitive-coupled memristive effect. Our model replicates eight types of characteristic nonlinear - behavior, which explains all observed nonpinched - curves seen in experiments. Furthermore, a reversible transition from a nonpinched - hysteresis loop to an ideal pinched - hysteresis loop is found, which explains the experimental data obtained in CHO-based devices when subjected to an external stimulus (e.g., voltage, moisture, or temperature). Our results provide the vital physics models and materials insights for elucidating the origins of nonpinched - hysteresis loops ascribed to capacitive-coupled memristive behavior.

摘要

忆阻器是一种具有记忆功能的电阻器,其概念由蔡少棠于1971年提出,作为电路的第四个基本元件。尽管人们投入了大量精力来理解忆阻器理论,但我们对忆阻器中无收缩电流-电压(I-V)滞后回线的理解仍不完整。在此,我们提出了一个忆阻器的物理模型,其中并联了一个电容器,该模型解释了无收缩滞后行为如何源于电容耦合忆阻效应。我们的模型复制了八种类型的特征非线性行为,这解释了实验中观察到的所有无收缩曲线。此外,还发现了从无收缩滞后回线到理想收缩滞后回线的可逆转变,这解释了基于CHO的器件在受到外部刺激(如电压、湿度或温度)时获得的实验数据。我们的结果为阐明归因于电容耦合忆阻行为的无收缩滞后回线的起源提供了重要的物理模型和材料见解。

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