Reistroffer Ian, Tolbert Jaden, Osterberg Jeffrey, Wang Pingshan
Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA.
Department of Physics, South Dakota School of Mines and Technology, Rapid City, SD 57701, USA.
Micromachines (Basel). 2025 Jul 29;16(8):882. doi: 10.3390/mi16080882.
Synthetic nanopores were recently demonstrated with memristive and nonlinear voltage-current behaviors, akin to ion channels in a cell membrane. Such ionic devices are considered a promising candidate for the development of brain-inspired neuromorphic computing techniques. In this work, we show the composite behavior of nanopore-array large memristors, formed with different membrane materials, pore sizes, electrolytes, and device arrangements. Anodic aluminum oxide (AAO) membranes with 5 nm and 20 nm diameter pores and track-etched polycarbonate (PCTE) membranes with 10 nm diameter pores are tested and shown to demonstrate memristive and nonlinear behaviors with approximately 10-10 pores in parallel when electrolyte concentration across the membranes is asymmetric. Ion diffusion through the large number of channels induces time-dependent electrolyte asymmetry that drives the system through different memristive states. The behaviors of series composite memristors with different configurations are also presented. In addition to helping understand fluidic devices and circuits for neuromorphic computing, the results also shed light on the development of field-assisted ion-selection-membrane filtration techniques as well as the investigations of large neurons and giant synapses. Further work is needed to de-embed parasitic components of the measurement setup to obtain intrinsic large memristor properties.
最近，合成纳米孔被证明具有忆阻和非线性电压-电流行为，类似于细胞膜中的离子通道。这种离子器件被认为是开发受大脑启发的神经形态计算技术的有前途的候选者。在这项工作中，我们展示了由不同的膜材料、孔径、电解质和器件排列形成的纳米孔阵列大型忆阻器的复合行为。测试了具有5纳米和20纳米直径孔的阳极氧化铝（AAO）膜以及具有10纳米直径孔的径迹蚀刻聚碳酸酯（PCTE）膜，结果表明，当跨膜电解质浓度不对称时，在大约10-10个孔并联的情况下，它们表现出忆阻和非线性行为。离子通过大量通道的扩散会引起随时间变化的电解质不对称，从而驱动系统通过不同的忆阻状态。还介绍了具有不同配置的串联复合忆阻器的行为。除了有助于理解用于神经形态计算的流体器件和电路外，这些结果还为场辅助离子选择膜过滤技术的发展以及对大型神经元和巨型突触的研究提供了启示。需要进一步开展工作，去除测量装置中的寄生成分，以获得本征大型忆阻器的特性。
