Islam Md Bodiul, Yanagida Masatoshi, Shirai Yasuhiro, Nabetani Yoichi, Miyano Kenjiro
Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan.
ACS Omega. 2017 May 24;2(5):2291-2299. doi: 10.1021/acsomega.7b00538. eCollection 2017 May 31.
In this study, highly stable, low-temperature-processed planar lead halide perovskite (MAPbI Cl ) solar cells with NiO interfaces have been developed. Our solar cells maintain over 85% of the initial efficiency for more than 670 h, at the maximum power point tracking (MPPT) under 1 sun illumination (no UV-light filtering) at 30 °C, and over 73% of the initial efficiency for more than 1000 h, at the accelerating aging test (85 °C) under the same MPPT condition. Storing the encapsulated devices at 85 °C in dark over 1000 h revealed no performance degradation. The key factor for the prolonged lifetime of the devices was the sputter-deposited polycrystalline NiO hole transport layer (HTL). We observed that the properties of NiO are dependent on its composition. At a higher Ni/Ni ratio, the conductivity of NiO is higher, but at the expense of optical transmittance. We obtained the highest power conversion efficiency of 15.2% at the optimized NiO condition. The sputtered NiO films were used to fabricate solar cells without annealing or any other treatments. The device stability enhanced significantly compared to that of the devices with PEDOT:PSS HTL. We clearly demonstrated that the illumination-induced degradation depends heavily on the nature of the HTL in the inverted perovskite solar cells (PVSCs). The sputtered NiO HTL can be a good candidate to solve stability problems in the lead halide PVSCs.
在本研究中，已开发出具有NiO界面的高度稳定、低温处理的平面卤化铅钙钛矿（MAPbI Cl ）太阳能电池。我们的太阳能电池在30°C、1太阳光照（无紫外线过滤）下的最大功率点跟踪（MPPT）条件下，670多个小时内保持超过初始效率的85%，在相同MPPT条件下的加速老化试验（85°C）中，1000多个小时内保持超过初始效率的73%。将封装好的器件在85°C黑暗环境中储存1000多个小时，未发现性能下降。器件寿命延长的关键因素是溅射沉积的多晶NiO空穴传输层（HTL）。我们观察到NiO的性质取决于其组成。在较高的Ni/Ni比下，NiO的电导率较高，但以牺牲光学透过率为代价。在优化的NiO条件下，我们获得了15.2%的最高功率转换效率。溅射的NiO薄膜用于制造未经退火或任何其他处理的太阳能电池。与具有PEDOT:PSS HTL的器件相比，器件稳定性显著提高。我们清楚地证明，光照引起的降解在很大程度上取决于倒置钙钛矿太阳能电池（PVSC）中空穴传输层的性质。溅射的NiO HTL可以成为解决卤化铅PVSC稳定性问题的良好候选材料。
