Yang Ming, Wang Jun, Zhao Yafei, He Liang, Ji Chunhui, Zhou Hongxi, Gou Jun, Li Weizhi, Wu Zhiming, Wang Xinran
School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China.
State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China.
ACS Nano. 2019 Sep 24;13(9):10810-10817. doi: 10.1021/acsnano.9b05775. Epub 2019 Sep 12.
As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs BiTe/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the BiTe/organics thin film can reach 2.56, which proves that BiTe can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405-3500 nm). The highest responsivity () of optimized devices can reach up to 23.54 AW; surprisingly, the of the device can still reach 1.93 AW at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.
作为一种具有绝缘体态和无隙表面态的量子物质状态，拓扑绝缘体（TIs）在光电器件中具有巨大潜力。另一方面，基于各向异性材料的偏振分辨光电器件在实际应用中具有压倒性优势。在这项工作中，展示了具有高各向异性迁移率比、快速响应时间、高响应度以及宽带光谱内的外量子效率（EQE）的三维拓扑绝缘体BiTe/有机物薄膜异质结偏振光电探测器。首先，BiTe/有机物薄膜的最大各向异性迁移率比可达2.56，这证明BiTe可作为制造偏振光电器件的敏感材料。此外，发现该器件在从可见光到中波红外光谱（405 - 3500 nm）范围内可呈现宽带宽和超高响应光电流。优化器件的最高响应度（）可达23.54 AW；令人惊讶的是，在3500 nm处该器件的响应度仍可达1.93 AW。此外，其具有4534%的超高外量子效率以及快速响应时间（1.42 ms）。上述优异特性表明拓扑绝缘体/有机物异质结器件适用于制造红外区域的高性能光电器件。
