Department of Chemistry, Indian Institute of Technology Delhi, New Delhi 110016, India.
Phys Chem Chem Phys. 2019 Sep 18;21(36):20463-20477. doi: 10.1039/c9cp04132j.
The Burstein-Moss (B-M) effect, which suggests that the optical band gap of degenerately doped semiconductors increases when all states close to the conduction band get populated due to shifting of an absorption edge to higher energy, is important, as it gives a chance to obtain different optical properties for the same material. Here, we report our observations of the similar shift in the optical band gap in NixFe2-xO3 nanocomposites as a function of composition with the help of cyclic voltammetry (CV) and XPS valence band (VB) position measurements. The conduction band edge (CBE) position of the NixFe2-xO3 nanocomposites as determined using CV was noted to move towards more negative potential with increasing Ni-concentration. A similar shift is also noted in the CBE estimated using XPS measurements (by subtracting the VB position from the optical band gap values). The observed shift in the optical band gap along with the CBE position gives the corresponding shift in the Fermi level, which is found to move closer to the CBE position, suggesting the observation of an effect similar to the B-M shift. Also, the extent of band bending estimated from the deviation of the CBE from the flat band potential (measured through Mott-Schottky plots) is found to increase with increasing Ni-concentration. Moreover, the Ni-composition has been observed to enhance the current density as well as to facilitate water splitting at a much lower onset potential compared to pure hematite. The NixFe2-xO3 nanocomposite with an 11 mol% Ni-composition shows the highest photo-electrochemical response with an almost ten times enhancement in the current density at 1.9 V vs. RHE in alkaline medium, as compared to the dark current. This enhanced performance is attributed to the improved charge separation and higher charge carrier density as a result of the higher extent of band bending in the NixFe2-xO3 nanocomposites.
Burstein-Moss(B-M)效应表明,由于导带中所有接近的态都被占据,导致吸收边缘向高能移动,因此简并掺杂半导体的光学带隙会增加,这是很重要的,因为它为同一材料获得不同的光学性质提供了机会。在这里,我们报告了我们在 NixFe2-xO3 纳米复合材料中观察到的类似的光学带隙在组成上的变化,这是通过循环伏安法(CV)和 XPS 价带(VB)位置测量来帮助实现的。使用 CV 确定的 NixFe2-xO3 纳米复合材料的导带边缘(CBE)位置随着 Ni 浓度的增加而向更负的电势移动。同样,通过从光学带隙值中减去 VB 位置来估计 XPS 测量的 CBE 也会发生类似的位移。观察到的光学带隙和 CBE 位置的偏移给出了相应的费米能级的偏移,这表明观察到类似于 B-M 偏移的效应。此外,从 CBE 偏离平带电势(通过 Mott-Schottky 图测量)的偏差估计的能带弯曲程度随着 Ni 浓度的增加而增加。此外,与纯赤铁矿相比,Ni 组成被观察到增强电流密度并在更低的起始电位下促进水的分解。具有 11 mol% Ni 组成的 NixFe2-xO3 纳米复合材料在碱性介质中表现出最高的光电化学响应,在 1.9 V 对 RHE 时的电流密度几乎增加了十倍,与暗电流相比。这种增强的性能归因于在 NixFe2-xO3 纳米复合材料中更高的带弯曲程度导致的电荷分离和更高的电荷载流子密度的提高。