Stoeckel Marc-Antoine, Gobbi Marco, Leydecker Tim, Wang Ye, Eredia Matilde, Bonacchi Sara, Verucchi Roberto, Timpel Melanie, Nardi Marco Vittorio, Orgiu Emanuele, Samorì Paolo
Université de Strasbourg , CNRS, ISIS , 67000 Strasbourg , France.
Centro de Física de Materiales (CSIC-UPV/EHU) , paseo Manuel de Lardizabal 5 , E-20018 Donostia , San Sebastián , Spain.
ACS Nano. 2019 Oct 22;13(10):11613-11622. doi: 10.1021/acsnano.9b05423. Epub 2019 Sep 16.
WSe is a layered ambipolar semiconductor enabling hole and electron transport, which renders it a suitable active component for logic circuitry. However, solid-state devices based on single- and bilayer WSe typically exhibit unipolar transport and poor electrical performance when conventional SiO dielectric and Au electrodes are used. Here, we show that silane-containing functional molecules form ordered monolayers on the top of the WSe surface, thereby boosting its electrical performance in single- and bilayer field-effect transistors. In particular, by employing SiO dielectric substrates and top Au electrodes, we measure unipolar mobility as high as μ = 150 cm V s and μ = 17.9 cm V s in WSe single-layer devices when molecular monolayers are chosen. Additionally, by asymmetric double-side functionalization with two different molecules, we provide opposite polarity to the top and bottom layer of bilayer WSe, demonstrating nearly balanced ambipolarity at the bilayer limit. Our results indicate that the controlled functionalization of the two sides of the WSe mono- and bilayer flakes with highly ordered molecular monolayers offers the possibility to simultaneously achieve energy level engineering and defect functionalization, representing a path toward deterministic control over charge transport in 2D materials.
WSe是一种层状双极半导体,能够实现空穴和电子传输,这使其成为逻辑电路中合适的有源组件。然而,当使用传统的SiO电介质和Au电极时,基于单层和双层WSe的固态器件通常表现出单极传输和较差的电性能。在此,我们表明含硅烷的功能分子在WSe表面顶部形成有序单分子层,从而提高其在单层和双层场效应晶体管中的电性能。特别是,通过采用SiO电介质衬底和顶部Au电极,当选择分子单分子层时,我们在WSe单层器件中测量到高达μ = 150 cm² V⁻¹ s⁻¹和μ = 17.9 cm² V⁻¹ s⁻¹的单极迁移率。此外,通过用两种不同分子进行不对称双侧功能化,我们为双层WSe的顶层和底层提供相反的极性,在双层极限处展示出近乎平衡的双极性。我们的结果表明,用高度有序的分子单分子层对WSe单层和双层薄片的两侧进行可控功能化,为同时实现能级工程和缺陷功能化提供了可能性,代表了一条对二维材料中的电荷传输进行确定性控制的途径。