Li Dan, Wang Xudong, Chen Yan, Zhu Sixin, Gong Fan, Wu Guangjian, Meng Caimin, Liu Lan, Wang Lin, Lin Tie, Sun Shuo, Shen Hong, Wang Xingjun, Hu Weida, Wang Jianlu, Sun Jinglan, Meng Xiangjian, Chu Junhao
School of Materials Science & Engineering, Shanghai University, 99 Shangda Road, Shanghai, 200444, People's Republic of China. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People's Republic of China.
Nanotechnology. 2018 Mar 9;29(10):105202. doi: 10.1088/1361-6528/aaa629.
In recent years, the electrical characteristics of WSe field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared to traditional gate dielectric SiO, the P(VDF-TrFE) can not only tune both electron and hole concentrations to the same high level, but also improve the hole mobility of bilayer WSe to 265.96 cm V s under SiO gating. Its drain current on/off ratio is also improved to 2 × 10 for p-type and 4 × 10 for n-type driven by P(VDF-TrFE). More importantly, the ambipolar behaviors of bilayer WSe are effectively achieved and maintained because of the remnant polarization field of P(VDF-TrFE). This work indicates that WSe FETs with P(VDF-TrFE) gating have huge potential for complementary logic transistor applications, and paves an effective way to achieve in-plane p-n junctions.
近年来，人们利用各种电介质对WSe场效应晶体管（FET）的电学特性进行了广泛研究。其中，能够完美调节WSe的极性是一项有意义且前景广阔的工作。在这项工作中，我们系统地研究了由铁电聚合物聚（偏二氟乙烯 - 三氟乙烯）（P(VDF-TrFE)）调制的双层WSe FET的电学性质。与传统栅极电介质SiO相比，P(VDF-TrFE)不仅能将电子和空穴浓度调节到相同的高水平，还能在SiO栅极作用下将双层WSe的空穴迁移率提高到265.96 cm² V⁻¹ s⁻¹。由P(VDF-TrFE)驱动时，其漏极电流的开/关比对于p型提高到2×10⁵，对于n型提高到4×10⁵。更重要的是，由于P(VDF-TrFE)的剩余极化场，双层WSe的双极性行为得以有效实现并维持。这项工作表明，采用P(VDF-TrFE)栅极的WSe FET在互补逻辑晶体管应用方面具有巨大潜力，并为实现面内p-n结铺平了一条有效途径。
