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有机氯添加剂对正置和倒置钙钛矿太阳能电池性能的对比影响。

Contrasting Effects of Organic Chloride Additives on Performance of Direct and Inverted Perovskite Solar Cells.

出版信息

ACS Appl Mater Interfaces. 2019 Oct 16;11(41):37833-37841. doi: 10.1021/acsami.9b14302. Epub 2019 Oct 1.

Abstract

Perovskite solar cells (PSCs) have demonstrated encouraging progress in recent years. Additive engineering, where diverse additives are incorporated into the perovskite layer, has been widely adopted to tune the perovskite grains, reduce defect density and charge recombination. Here, we observe a universal phenomenon that organic chloride additives enhance the open circuit voltage () and power conversion efficiencies (PCEs) of direct PSCs but decrease the , short-circuit current (), and PCE of inverted PSCs, regardless of the choice of charge transport materials. The polyTPD-based direct device incorporating trimethylammonium chloride (TACl) additive delivery improved PCE from 17.8 to 20.0%, arising from the enhanced from 1.03 to 1.12 V. With the same content of TACl, the best PCE of the polyTPD-based inverted device decreased from 20.2 to 18.5% because of the reduced (1.05-1.01 V) and (23.2-22.5 mA/cm). Our investigation confirms that organic chloride will p-dope perovskites and elevate the work functions, which lead to favorable/unfavorable charge transfer between perovskite films and its upper transport layers in direct and inverted devices. This work provides an insight into the rational design of the device structure when applying additives which can dope the perovskite to affect charge transfer at the perovskite/charge transport layer interface.

摘要

钙钛矿太阳能电池 (PSCs) 在近年来取得了令人鼓舞的进展。添加剂工程,即将各种添加剂掺入钙钛矿层中,已被广泛采用来调节钙钛矿晶粒、降低缺陷密度和电荷复合。在这里,我们观察到一种普遍现象,即有机氯化物添加剂提高了直接 PSCs 的开路电压 ( ) 和功率转换效率 (PCEs),但降低了倒置 PSCs 的 、短路电流 () 和 PCE,而与电荷传输材料的选择无关。聚(对苯二甲酸乙二酯)(polyTPD) 基直接器件掺入三甲铵氯 (TACl) 添加剂后,PCE 从 17.8%提高到 20.0%,这是由于 从 1.03V 提高到 1.12V。在相同 TACl 含量下,聚(对苯二甲酸乙二酯)(polyTPD) 基倒置器件的最佳 PCE 从 20.2%降低到 18.5%,因为 (1.05-1.01V)和 (23.2-22.5mA/cm)降低。我们的研究证实,有机氯化物将 p 型掺杂钙钛矿并提高功函数,这导致在直接和倒置器件中,钙钛矿薄膜与其上传输层之间的电荷转移有利/不利。这项工作为在应用可以掺杂钙钛矿以影响钙钛矿/电荷传输层界面处电荷转移的添加剂时,合理设计器件结构提供了深入了解。

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