Chiu Yu-Lin, Li Chia-Wei, Kang Yu-Hsuan, Lin Chi-Wei, Lu Chin-Wei, Chen Chih-Ping, Chang Yuan Jay
Department of Chemistry, Tunghai University, Taichung 40704, Taiwan.
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan.
ACS Appl Mater Interfaces. 2022 Jun 8;14(22):26135-26147. doi: 10.1021/acsami.2c03025. Epub 2022 May 29.
In this paper, we describe the application of the enantiomeric compounds -, each featuring a bulky spiro[fluorene-9,9'-phenanthren]-10'-one moiety, as both hole-transporting materials (HTMs) and interfacial layers in both n-i-p and p-i-n perovskite solar cells (PSCs). These HTMs contain an enantiomeric mixture and a variety of core units linked to triarylamine donors to extend the degree of π-conjugation. The n-i-p PSCs incorporating exhibited a power conversion efficiency (PCE) of 19.15% under AM 1.5G conditions (100 mW cm); this value was comparable with that obtained using as the HTM (18.25%). We obtained efficient and stable p-i-n PSCs having the dopant-free structure indium tin oxide (ITO)/NiO/interfacial layer ()/perovskite/PCBM/BCP/Ag. The presence of the spiro-based compounds and efficiently passivated the interfacial and grain boundary defects of the perovskite and enhanced the sizes of its grains, more so than did and . These spiro-based derivatives packed densely and functioned as Lewis bases to coordinate Pb and Ni ions in the perovskite and NiO layers, respectively. Together, the effects of smaller grain boundaries and defect passivation of the perovskite enhanced the optoelectronic properties of the PSCs. The photoinduced charge carrier extraction in the linearly increasing voltage (photo-CELIV) curves of showed the faster carrier transport 3.3 × 10 cm V s, which improved the carrier mobility, supporting the notion of defect passivation of the perovskite. The best-performing NiO/ device provided a short-circuit current density () of 22.88 mA cm, an open-circuit voltage () of 1.10 V, and a fill factor (FF) of 80.93%, corresponding to an overall PCE of 20.37%. In addition, the PCEs of the NiO/ and NiO/ PSC devices underwent decays of only 98.1 and 97.0% of their original values after 41 days under an Ar atmosphere. Thus, these derivatives passivated the NiO surface and optimized the film quality of perovskites, thereby leading to superior PCEs of their respective PSCs.
在本文中，我们描述了对映体化合物（每个都具有庞大的螺[芴-9,9'-菲]-10'-酮部分）作为空穴传输材料（HTMs）以及在n-i-p和p-i-n钙钛矿太阳能电池（PSC）中作为界面层的应用。这些HTMs包含对映体混合物以及与三芳基胺供体相连的各种核心单元，以扩展π共轭程度。在AM 1.5G条件（100 mW/cm²）下，采用该材料的n-i-p PSC的功率转换效率（PCE）为19.15%；该值与使用[具体材料]作为HTM时获得的值（18.25%）相当。我们获得了具有无掺杂剂结构氧化铟锡（ITO）/氧化镍（NiO）/界面层（[具体材料]）/钙钛矿/苯基-C61-丁酸甲酯（PCBM）/氟化硼二吡咯（BCP）/银的高效且稳定的p-i-n PSC。与[其他材料]相比，基于螺环的化合物[具体材料]和[具体材料]的存在有效地钝化了钙钛矿的界面和晶界缺陷，并增大了其晶粒尺寸。这些基于螺环的[具体材料]衍生物紧密堆积，并分别作为路易斯碱与钙钛矿和NiO层中的铅离子和镍离子配位。总之，较小的晶界和钙钛矿缺陷钝化的效果增强了PSC的光电性能。[具体材料]的线性增加电压下的光致电荷载流子提取（光电流诱导瞬态光电压谱，photo-CELIV）曲线显示出更快的载流子传输速度3.3×10⁻³ cm² V⁻¹ s⁻¹，这提高了载流子迁移率，支持了钙钛矿缺陷钝化的观点。性能最佳的NiO/[具体材料]器件提供了22.88 mA/cm²的短路电流密度（Jsc）、1.10 V的开路电压（Voc）和80.93%的填充因子（FF），对应于20.37%的整体PCE。此外，在氩气气氛下41天后，NiO/[具体材料]和NiO/[具体材料] PSC器件的PCE仅衰减至其原始值的98.1%和97.0%。因此，这些[具体材料]衍生物钝化了NiO表面并优化了钙钛矿的薄膜质量，从而使其各自的PSC具有优异的PCE。
