Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, People's Republic of China.
Nanotechnology. 2020 Jan 17;31(4):045202. doi: 10.1088/1361-6528/ab482f. Epub 2019 Sep 26.
Spin transfer nano-oscillators (STNOs) are a new type of radio frequency (RF) oscillators that utilize the current-induced magnetization precession in a magnetic tunnel junction device to generate high frequency microwave signal. Since both the frequency and the amplitude of STNOs can be tuned by changing the current, they are potentially used for amplitude shift keying and frequency shift keying modulation without the need for an RF mixer, which leads to compact RF components. In this letter, a novel strategy is proposed to modulate the frequency and the amplitude by memristor-controlled spin nano-oscillators, whereby the STNO is responsible for microwave emitting and memristor serves as a current regulator which further modulates the frequency and amplitude. In addition, the I-V curves show that a multilevel resistance behavior can also be achieved in the same architecture.
自旋转移纳米振荡器（STNO）是一种新型的射频（RF）振荡器，它利用磁性隧道结器件中的电流诱导磁化进动来产生高频微波信号。由于 STNO 的频率和幅度都可以通过改变电流来调节，因此它们可以用于调幅和调频调制，而无需使用射频混频器，从而实现了紧凑的射频元件。在这封信中，提出了一种通过忆阻器控制自旋纳米振荡器来调制频率和幅度的新策略，其中 STNO 负责微波发射，而忆阻器则作为电流调节器，进一步调节频率和幅度。此外，I-V 曲线表明，在相同的结构中也可以实现多级电阻行为。
