Nanoscale Science and Engineering Center, University of California, Berkeley, CA, 94706, USA.
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA.
Nat Commun. 2019 Oct 8;10(1):4565. doi: 10.1038/s41467-019-12092-x.
Two-dimensional topological materials bearing time reversal-breaking magnetic fields support protected one-way edge modes. Normally, these edge modes adhere to physical edges where material properties change abruptly. However, even in homogeneous materials, topology still permits a unique form of edge modes - kink modes - residing at the domain boundaries of magnetic fields within the materials. This scenario, despite being predicted in theory, has rarely been demonstrated experimentally. Here, we report our observation of topologically-protected high-frequency kink modes - kink magnetoplasmons (KMPs) - in a GaAs/AlGaAs two-dimensional electron gas (2DEG) system. These KMPs arise at a domain boundary projected from an externally-patterned magnetic field onto a uniform 2DEG. They propagate unidirectionally along the boundary, protected by a difference of gap Chern numbers ([Formula: see text]) in the two domains. They exhibit large tunability under an applied magnetic field or gate voltage, and clear signatures of nonreciprocity even under weak-coupling to evanescent photons.
承载时间反演破缺磁场的二维拓扑材料支持受保护的单向边缘模式。通常,这些边缘模式依附于材料属性急剧变化的物理边缘。然而,即使在均匀材料中,拓扑仍然允许一种独特形式的边缘模式——扭结模式——存在于材料内磁场的畴界处。尽管这一场景在理论上已有预测,但在实验中很少得到证实。在这里,我们报告了在 GaAs/AlGaAs 二维电子气(2DEG)系统中观察到的拓扑保护的高频扭结模式——扭结磁等离子体激元(KMP)。这些 KMP 出现在由外部图案化磁场投影到均匀 2DEG 上的畴界处。它们沿着边界单向传播,由两个畴中间隙陈数 ([Formula: see text]) 的差异保护。它们在施加磁场或栅极电压下表现出很大的可调谐性,并且即使在与消逝光子的弱耦合下也表现出明显的非互易性。