Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Adv Mater. 2019 Dec;31(49):e1905143. doi: 10.1002/adma.201905143. Epub 2019 Oct 21.
Cesium-based inorganic perovskite solar cells (PSCs) are promising due to their potential for improving device stability. However, the power conversion efficiency of the inorganic PSCs is still low compared with the hybrid PSCs due to the large open-circuit voltage (V ) loss possibly caused by charge recombination. The use of an insulated shunt-blocking layer lithium fluoride on electron transport layer SnO for better energy level alignment with the conduction band minimum of the CsPbI Br and also for interface defect passivation is reported. In addition, by incorporating lead chloride in CsPbI Br precursor, the perovskite film crystallinity is significantly enhanced and the charge recombination in perovksite is suppressed. As a result, optimized CsPbI Br PSCs with a band gap of 1.77 eV exhibit excellent performance with the best V as high as 1.25 V and an efficiency of 18.64%. Meanwhile, a high photostability with a less than 6% efficiency drop is achieved for CsPbI Br PSCs under continuous 1 sun equivalent illumination over 1000 h.
基于铯的无机钙钛矿太阳能电池(PSCs)由于其提高器件稳定性的潜力而备受关注。然而,与混合 PSCs 相比,无机 PSCs 的功率转换效率仍然较低,这可能是由于电荷复合导致开路电压(V )损失较大。研究报告称,在电子传输层 SnO 上使用氟化锂绝缘旁路阻断层,以更好地与 CsPbI Br 的导带最小值进行能级对准,并对界面缺陷进行钝化。此外,通过在 CsPbI Br 前体中加入氯化铅,可以显著提高钙钛矿薄膜的结晶度,并抑制钙钛矿中的电荷复合。结果,优化后的带隙为 1.77 eV 的 CsPbI Br PSCs 表现出优异的性能,最高开路电压(V )高达 1.25 V,效率为 18.64%。同时,CsPbI Br PSCs 在 1000 小时的连续 1 个太阳等效光照下,效率下降小于 6%,具有很高的光稳定性。