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用于SrTiO薄膜及界面介电特性的修正横向伊辛模型

Modified transverse Ising model for the dielectric properties of SrTiO films and interfaces.

作者信息

Chapman Kelsey S, Atkinson W A

机构信息

Department of Physics and Astronomy, Trent University, Peterborough, Ontario, K9L 0G2, Canada.

出版信息

J Phys Condens Matter. 2020 Feb 6;32(6):065303. doi: 10.1088/1361-648X/ab4fa7. Epub 2019 Oct 21.

Abstract

The transverse Ising model (TIM), with pseudospins representing the lattice polarization, is often used as a simple description of ferroelectric materials. However, we demonstrate that the TIM, as it is usually formulated, provides an incorrect description of SrTiO films and interfaces because of its inadequate treatment of spatial inhomogeneity. We correct this deficiency by adding a pseudospin anisotropy to the model. We demonstrate the physical need for this term by comparison of the TIM to a typical Landau-Ginzburg-Devonshire model. We then demonstrate the physical consequences of the modification for two model systems: a ferroelectric thin film, and a metallic LaAlO/SrTiO interface. We show that, in both cases, the modified TIM has a substantially different polarization profile than the conventional TIM. In particular, at low temperatures the formation of quantized states at LaAlO/SrTiO interfaces only occurs in the modified TIM.

摘要

具有代表晶格极化的赝自旋的横向伊辛模型(TIM),常被用作铁电材料的一种简单描述。然而,我们证明,按照通常的公式表述,TIM由于对空间不均匀性处理不足,对SrTiO薄膜和界面给出了不正确的描述。我们通过向模型中添加赝自旋各向异性来纠正这一缺陷。通过将TIM与典型的朗道 - 金兹堡 - 德文希尔模型进行比较,我们证明了这一项的物理必要性。然后,我们针对两个模型系统展示了这种修正的物理后果:一个铁电薄膜和一个金属LaAlO₃/SrTiO₃界面。我们表明,在这两种情况下,修正后的TIM与传统TIM相比具有实质上不同的极化分布。特别是,在低温下,LaAlO₃/SrTiO₃界面处量子化态的形成仅在修正后的TIM中出现。

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