Ovcharov Alexey V, Degtyarenko Pavel N, Chepikov Vsevolod N, Vasiliev Alexander L, Gavrilkin Sergey Yu, Karateev Igor A, Tsvetkov Alexey Yu, Kaul Andrey R
National Research Center "Kurchatov Institute", Moscow, 123182, Russia.
SuperOx, Moscow, 117246, Russia.
Sci Rep. 2019 Oct 23;9(1):15235. doi: 10.1038/s41598-019-51348-w.
The microstructure of GdBaCuO based on superconducting tapes with BaSnO and BaZrO artificial pinning centers formed by high-rate pulse laser deposition in SuperOx Japan was studied by scanning/transmission electron microscopy. The artificial pinning centers have adopted columnar morphology with average diameter of about 8 nm (BaSnO-doped sample) and 6.5 nm (BaZrO-doped sample) and density of 500 μm for the both samples. The average length of the BaSnO nanocolumns is about two times higher than the BaZrO nanocolumns. The angular dependences of critical current in magnetic field up to 1 Tesla at 77 and 65 K have been obtained. The critical current and its anisotropy depend on artificial pinning centers presence and their type. The angular dependence of resistivity in the field up to 9 Tesla was also studied and discussed.
通过扫描/透射电子显微镜研究了在日本超导氧化公司采用高速脉冲激光沉积法制备的具有BaSnO和BaZrO人工钉扎中心的GdBaCuO基超导带材的微观结构。人工钉扎中心呈柱状形态,平均直径约为8纳米(BaSnO掺杂样品)和6.5纳米(BaZrO掺杂样品),两种样品的密度均为500微米。BaSnO纳米柱的平均长度比BaZrO纳米柱高出约两倍。获得了在77K和65K下高达1特斯拉磁场中临界电流的角度依赖性。临界电流及其各向异性取决于人工钉扎中心的存在及其类型。还研究并讨论了高达9特斯拉磁场中电阻率的角度依赖性。