Dong Li, Li Dechun, Pan Han, Li Ying, Zhao Shengzhi, Li Guiqiu, Chu Hongwei
Appl Opt. 2019 Oct 20;58(30):8194-8199. doi: 10.1364/AO.58.008194.
Few-layered ${{\rm MoSe}_2}$MoSe nanosheets were prepared by the low-cost, simple liquid-phase exfoliation method. The ${{\rm MoSe}_2}$MoSe nanosheets possessed the modulation depth of 16.5% with a saturation intensity of ${0.84};{{\rm MW/cm}^2}$0.84MW/cm at 1.34 µm, indicating the performance as the saturable absorber. The passively $Q$Q-switched c-cut ${\rm Nd}:{{\rm GdVO}_4}$Nd:GdVO laser at 1.34 µm was demonstrated with the few-layered ${{\rm MoSe}_2}$MoSe saturable absorber for the first time. The minimum pulse duration of 420 ns at a repetition rate of 238 kHz could be obtained. In order to significantly reduce the pulse duration, dual-loss modulation simultaneously using both ${{\rm V}^{3 + }}:{\rm YAG}$V:YAG and ${{\rm MoSe}_2}$MoSe saturable absorbers was implemented. The pulse duration was compressed to a 82.4 ns pulse at a repetition rate of 409.3 kHz at the pump power of 10.66 W. The experimental results provide a solid fundament for the short pulse generation with ${{\rm MoSe}_2}$MoSe saturable absorber at 1.34 µm.
通过低成本、简单的液相剥离法制备了少层${{\rm MoSe}_2}$纳米片。该${{\rm MoSe}_2}$纳米片在1.34 µm处具有16.5%的调制深度和0.84 ${{\rm MW/cm}^2}$的饱和强度，表明其具有可饱和吸收体的性能。首次用少层${{\rm MoSe}_2}$可饱和吸收体演示了1.34 µm处的被动调Q c切割${\rm Nd}:{{\rm GdVO}_4}$激光器。在238 kHz的重复频率下可获得420 ns的最小脉冲持续时间。为了显著缩短脉冲持续时间，同时使用${{\rm V}^{3 + }}:{\rm YAG}$和${{\rm MoSe}_2}$可饱和吸收体实现了双损耗调制。在10.66 W的泵浦功率下，脉冲持续时间在409.3 kHz的重复频率下被压缩到82.4 ns脉冲。实验结果为在1.34 µm处用${{\rm MoSe}_2}$可饱和吸收体产生短脉冲提供了坚实的基础。
