Shchukin V A, Ledentsov N N, Egorov A Yu
Opt Express. 2019 Oct 28;27(22):32019-32036. doi: 10.1364/OE.27.032019.
Surface-trapped electromagnetic waves can be localized at a boundary between a semiconductor distributed Bragg reflector (DBR) and a homogeneous dielectric medium or air. These waves enable a novel class of in-plane-emitting optical devices including edge-emitting lasers, disk microlasers or near-field fiber-coupled lasers. We show that the surface-trapped modes can be controlled by tuning the thickness of a single DBR layer. Diagrams in variables "wavelength - thickness of the control layer" are constructed for both TM and TE optical modes revealing the parameter domains, in which surface-trapped modes exist. The domains contain cusps, in the vicinity of which a surface-trapped optical mode is allowed only in a narrow spectral region, enabling wavelength-stabilized operation of a laser. For a structure designed for lasing at ∼1 µm, the lasing wavelength shifts upon temperature increase at a rate ∼0.08 nm/K. The fraction of the optical power of the surface-trapped mode accumulated in the homogeneous dielectric can reach ∼50%. Thus, such structure is a near-field wavelength-stabilized semiconductor laser. Further, such structure can be applied as a wavelength-stabilized semiconductor optical amplifier adjacent to a dielectric waveguide or an optical fiber, both for integrated photonics and for ultrahigh-brightness laser diodes and diode arrays and stacks.
表面捕获电磁波可以局域在半导体分布布拉格反射器（DBR）与均匀介质或空气之间的边界处。这些波促成了一类新型的面内发射光学器件，包括边缘发射激光器、盘形微激光器或近场光纤耦合激光器。我们表明，表面捕获模式可以通过调整单个DBR层的厚度来控制。针对TM和TE光学模式构建了“波长 - 控制层厚度”变量的图表，揭示了表面捕获模式存在的参数域。这些域包含尖点，在其附近仅在窄光谱区域允许表面捕获光学模式，从而实现激光器的波长稳定运行。对于设计用于在1 µm处激射的结构，激射波长随温度升高以0.08 nm/K的速率移动。表面捕获模式的光功率在均匀介质中积累的比例可达到~50%。因此，这种结构是一种近场波长稳定的半导体激光器。此外，这种结构可以用作与介质波导或光纤相邻的波长稳定半导体光放大器，适用于集成光子学以及超高亮度激光二极管、二极管阵列和堆叠。
