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掺杂对锡团簇的几何和电子结构的影响。

Doping effects on the geometric and electronic structure of tin clusters.

机构信息

Technische Universität Darmstadt, Eduard-Zintl-Institut, Alarich-Weiss-Straße 8, 64287 Darmstadt, Germany.

出版信息

Phys Chem Chem Phys. 2019 Nov 28;21(44):24478-24488. doi: 10.1039/c9cp05124d. Epub 2019 Nov 5.

Abstract

Molecular beam electric deflection experiments on neutral single copper-doped tin clusters are presented at different cryogenic nozzle temperatures. The experimental cluster beam profiles SnCu (N = 9-16) are compared with classical rotational dynamic simulations of globally optimized structures obtained by a genetic algorithm based on density functional theory. The formation of endohedral complexes with comparable geometry to manganese- and gold-doped tin is confirmed. Theoretical methods predict ionic structures of the type Cu@Sn with electron transfer from the tin cage to the central copper dopant. This behaviour is discussed based on a molecular orbital picture particularly with respect to other transition metal tetrel complexes.

摘要

介绍了在不同低温喷嘴温度下对中性单铜掺杂锡团簇的分子束电偏转实验。实验团簇束轮廓 SnCu(N = 9-16)与通过基于密度泛函理论的遗传算法全局优化结构的经典旋转动力学模拟进行了比较。证实了与锰和金掺杂锡具有可比几何形状的笼内复合物的形成。理论方法预测了类型 Cu@Sn 的离子结构,其中电子从锡笼转移到中心铜掺杂剂。基于分子轨道图,特别是与其他过渡金属四元复合物的关系,讨论了这种行为。

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