Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China.
High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China.
Phys Chem Chem Phys. 2019 Dec 7;21(45):25220-25225. doi: 10.1039/c9cp04685b. Epub 2019 Nov 7.
CrGeTe has recently emerged as a new two-dimensional ferromagnetic semiconductor (2DFMS) that is promising for spintronic applications. The origin of the ferromagnetism is a debatable point. In this study, ac/dc susceptibility and electronic spin resonance (ESR) measurements are performed to explore the origin of the ferromagnetism in CrGeTe. Through the ac susceptibility scaling, the critical temperature T = 62.84 K and δ = 5.24 from the critical isotherm, γ + β = 1.78 from the temperature dependence of the crossover line and γ = 1.43 from the temperature dependence of the susceptibility along the same line. Unlike CrSiTe whose magnetism can be well described by the 2D-Ising model, CrGeTe cannot be simply described by a single theory model. Meanwhile, the origin of the abnormal critical behavior has been explored and it may be related to the presence of the possible magnetic correlation around the high temperature T* ∼ 160 K, which is confirmed by different probing measurements. The magnetic correlation at high temperature accompanied by the strong magnetic-crystalline anisotropy at low temperature plays an important role in the origin of the abnormal ferromagnetism in CrGeTe. Our results may supply a typical reference to investigate the abnormal ferromagnetism of 2DFMSs.
CrGeTe 最近成为一种新的二维铁磁半导体(2DFMS),有望应用于自旋电子学。铁磁性的起源是一个有争议的问题。在这项研究中,我们进行了交流/直流磁化率和电子自旋共振(ESR)测量,以探索 CrGeTe 中铁磁性的起源。通过交流磁化率标度,我们得到了临界温度 T=62.84 K 和 δ=5.24(来自临界等温线),γ+β=1.78(来自交叉线的温度依赖性)和 γ=1.43(来自沿同一条线的磁化率的温度依赖性)。与 CrSiTe 不同,其磁性可以很好地用二维 Ising 模型来描述,CrGeTe 不能简单地用单一的理论模型来描述。同时,我们探索了异常临界行为的起源,它可能与高温 T*∼160 K 附近可能存在的磁相关性有关,这一点通过不同的探测测量得到了证实。高温下的磁相关性伴随着低温下的强磁晶各向异性,在 CrGeTe 中异常铁磁性的起源中起着重要作用。我们的结果可能为研究 2DFMSs 的异常铁磁性提供一个典型的参考。